RJH60M2DPP-M0#T2 Datasheet RJH60M2DPP-M0#T2 | P1-P3

R07DS0530EJ0300 Rev.3.00 Page 1 of 9

May 25, 2012

Preliminary Datasheet

RJH60M2DPP-M0

600V - 12A - IGBT

Application: Inverter

Features

 Short circuit withstand time (8 s typ.)

 Low collector to emitter saturation voltage

V

CE(sat)

= 1.9 V typ. (at I

C

= 12 A, V

GE

= 15 V, Ta = 25°C)

 Built in fast recovery diode (85 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

t

f

= 45 ns typ. (at V

CC

= 300 V, V

GE

= 15 V, I

C

= 12 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003AF-A

(Package name:

TO-220FL)

1

2

3

1. Gate

2. Collector

3. Emitter

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

R

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

C

25 A Collector current

Tc = 100°C I

C

12 A

Collector peak current ic(peak)

Note1

36 A

Collector to emitter diode forward current i

DF

12 A

Collector to emitter diode forward peak current i

DF

(peak)

Note1

50 A

Collector dissipation P

C

Note2

33.8 W

Junction to case thermal resistance (IGBT) j-c

Note2

3.7 °C/ W

Junction to case thermal resistance (Diode) j-cd

Note2

4.9 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0530EJ0300

Rev.3.00

May 25, 2012

RJH60M2DPP-M0 Preliminary

R07DS0530EJ0300 Rev.3.00 Page 2 of 9

May 25, 2012

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Collector to emitter breakdown voltage V

(BR)CES

600 — — V Iy = 10 A, V

GE

= 0

Zero gate voltage collector current

/ Diode reverse current

I

CES

/ I

R

— — 5 A V

CE

= 600 V, V

GE

= 0

Gate to emitter leak current I

GES

— — ±1 A V

GE

= ±30 V, V

CE

= 0

Gate to emitter cutoff voltage V

GE(off)

5 — 7 V V

CE

= 10 V, I

C

= 1 mA

V

CE(sat)

— 1.9 2.5 V I

C

= 12 A, V

GE

= 15 V

Note3

Collector to emitter saturation voltage

V

CE(sat)

— 2.8 — V I

C

= 25 A, V

GE

= 15 V

Note3

Input capacitance Cies — 430 — pF

Output capacitance Coes — 40 — pF

Reverse transfer capacitance Cres — 15 — pF

V

CE

= 25 V

V

GE

= 0

f = 1 MHz

Total gate charge Qg — 33 — nC

Gate to emitter charge Qge — 5 — nC

Gate to collector charge Qgc — 19 — nC

V

GE

= 15 V

V

CE

= 300 V

I

C

= 12 A

Turn-on delay time t

d(on)

— 32 — ns

Rise time t

r

— 18 — ns

Turn-off delay time t

d(off)

— 70 — ns

Fall time t

f

— 45 — ns

Turn-on energy E

on

— 0.18 — mJ

Turn-off energy E

off

— 0.18 — mJ

Total switching energy E

total

— 0.36 — mJ

V

CC

= 300 V

V

GE

= 15 V

I

C

= 12 A

Rg = 5 

Inductive load

Short circuit withstand time t

sc

6 8 — s

Tc = 100 C

V

CC

 360 V, V

GE

= 15 V

FRD Forward voltage V

F

— 1.2 1.6 V I

F

= 12 A

Note3

FRD reverse recovery time t

rr

— 85 — ns

FRD reverse recovery charge Q

rr

— 0.14 — C

FRD peak reverse recovery current I

rr

— 4.2 — A

I

F

= 12 A

di

F

/dt = 100 A/s

Notes: 3. Pulse test.

RJH60M2DPP-M0 Preliminary

R07DS0530EJ0300 Rev.3.00 Page 3 of 9

May 25, 2012

Main Characteristics

40

30

20

10

0

Typical Output Characteristics

40

30

20

10

12345

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Pulse Test

Tj = 25

°

C

V

GE

= 8 V

15 V

18 V

10 V

12 V

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Maximum Safe Operation Area

Typical Output Characteristics

12345

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Pulse Test

Tj = 150

°

C

V

GE

= 8 V

15 V

10 V

Collector Current I

C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs.

Case Temperature

0255010075 125 150 1750255010075 125 150 175

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Turn-off SOA

0200400 600 800

Collector Dissipation Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs.

Case Temperature

50

40

30

20

10

0

30

25

20

15

10

5

0

50

40

30

20

10

0

18 V

12 V

0.01

100

1

10

0.1

110010

1000

Tc = 25°C

Single pulse

100 μs

PW = 10 μs

RJH60M2DPP-M0#T2

RJH60M2DPP-M0#T2

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