OMO ElectronicOMO Electronic
Expand menu
0 Cart

IXTY1N80P

P1-P3P4-P5
© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 800 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C1A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
2A
I
A
T
C
= 25°C1A
E
AS
T
C
= 25°C75mJ
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 5 V/ns
P
D
T
C
= 25°C42W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.50 g
TO-220 3.00 g
TO-252 0.35 g
TO-251 0.40 g
DS100112(02/09)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 800 V
V
GS(th)
V
DS
= V
GS
, I
D
= 50μA 2.0 4.0 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
3 μA
V
GS
= 0V T
J
= 125°C 30 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 10 14 Ω
Polar
TM
Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
V
DSS
= 800V
I
D25
= 1A
R
DS(on)
≤≤
≤≤
≤ 14
ΩΩ
ΩΩ
Ω
Preliminary Technical Information
Features
z
International Standard Packages
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low Package Inductance
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
Switched-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
TO-252 (IXTY)
(TAB)
TO-251 (IXTU)
S
D
G
S
G
TO-220 (IXTP)TO-263 (IXTA)
(TAB)
G
S
(TAB)
D
G
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 0.30 0.55 S
C
iss
250 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 22 pF
C
rss
5.3 pF
t
d(on)
20 ns
t
r
18 ns
t
d(off)
58 ns
t
f
42 ns
Q
g(on)
9.0 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
1.4 nC
Q
gd
5.5 nC
R
thJC
3.0 °C/W
R
thCS
(TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0V 1 A
I
SM
Repetitive, Pulse Width Limited by T
JM
4 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.3 V
t
rr
700 ns
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 50Ω (External)
I
F
= 1A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
Fig. 1. Output Characteristics
@ 25ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 3. Output Characteristics
@ 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 1A
I
D
= 0.5A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.5A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTY1N80P

Mfr. #:
Buy IXTY1N80P
Manufacturer:
Littelfuse
Description:
MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet