NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 25 Volt V
CEO
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
*High Gain
*P
tot
=1.2 Watts
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
6V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
5A
Practical Power Dissipation* P
totp
1.58 W
Power Dissipation at T
amb
=25°C P
tot
1.2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
60 120 V
I
C
=100µA
Collector-Emitter Breakdown
Voltag
V
(BR)CER
60 120 V
IC=1
µA, RB ≤1KΩ
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
25 35 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
68 V
I
E
=100µA
Collector Cut-Off Current I
CBO
50
1
nA
µA
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Collector Cut-Off Current I
CER
R ≤1KΩ
50
1
nA
µA
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
10 nA V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
25
50
100
180
50
80
200
220
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
880 950 mV I
C
=5A, I
B
=100mA*
E-Line
TO92 Compatible
ZTX869
3-306
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
800 900 mV IC=5A, V
CE
=1V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
250
40
450
450
400
100
I
C
=10mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition Frequency f
T
100 MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
70 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
60
680
ns
ns
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
ZTX869
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T -Temperature (°C)
a
x
ower
ss
pa
on
-
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01
4.0
3.0
-20 0 20
40 60 80 100 120 200180160140
t
1
t
P
D=t
1/tP
Case te
mperatu
r
e
Ambien
t t
empe
rat
ure
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-307
