1999 May 11 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199W
FEATURES
• Small plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 μs
• Continuous reverse voltage:
max.
75 V
• Repetitive peak reverse voltage:
max.
85 V
• Repetitive peak forward current:
max.
500 mA.
APPLICATIONS
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small plastic
SOT323 (SC-70) SMD package.
The
diodes are connected in series.
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 cathode; anode
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.
handbook, halfpage
12
MAM391
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode unless otherwise specified
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current single diode loaded; T
s
= 90 °C; see Fig.2 − 135 mA
double diode loaded; T
s
= 90 °C; see Fig.2 − 110 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
= 25 °C prior to surge;
see
Fig.4
t
p
= 1 μs − 4 A
t
p
= 1 ms − 1 A
t
p
= 1 s − 0.5 A
P
tot
total power dissipation single diode loaded; T
s
= 90 °C − 150 mW
double diode loaded; T
s
= 90 °C − 240 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
