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VNV35N0713TR

P1-P3P4-P6P7-P9P10-P12P13-P13
VNP35N07FI
VNB35N07/VNV35N07
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM (∗)
TYPE V
clamp
R
DS(on)
I
lim
VNP35N07FI
VNB35N07
VNV35N07
70 V
70 V
70 V
0.028 Ω
0.028 Ω
0.028 Ω
35 A
35 A
35 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP35N07FI, VNB35N07 and VNV35N07
are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1
10
PowerSO-10
1
2
3
1
3
D2PAK
TO-263
ISOWATT220
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
1/13
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
PowerSO-10
D2PAK
ISOWATT220
V
DS
Drain-source Voltage (V
in
= 0) Internally Clamped V
V
in
Input Voltage 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -50 A
V
esd
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V
P
tot
Total Dissipation at T
c
=25
o
C 125 40 W
T
j
Operating Junction Temperature Internally Limited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
Storage Temperature -55 to 150
o
C
THERMAL DATA
ISOWATT220 PowerSO-10 D2PAK
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
62.5
1
50
1
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0 60 70 80 V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
=2mA V
in
=0 55 V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
=-1mA -1 -0.3 V
I
DSS
Zero Input Voltage
Drain Current (V
in
=0)
V
DS
=13V V
in
=0
V
DS
=25V V
in
=0
50
200
µA
µA
I
ISS
Supply Current from
Input Pin
V
DS
=0V V
in
= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IN(th)
Input Threshold
Voltage
V
DS
=V
in
I
D
+Ii
n
=1mA 0.8 3 V
R
DS(on)
Static Drain-source On
Resistance
V
in
=10V I
D
=18A
V
in
=5V I
D
=18A
0.028
0.035
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗)Forward
Transconductance
V
DS
=13V I
D
=18A 20 25 S
C
oss
Output Capacitance V
DS
=13V f=1MHz V
in
= 0 980 1400 pF
VNP35N07FI-VNB35N07-VNV35N07
2/13
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=28V I
d
=18A
V
gen
=10V R
gen
=10Ω
(see figure 3)
100
350
650
200
200
600
1000
350
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=28V I
d
=18A
V
gen
=10V R
gen
= 1000 Ω
(see figure 3)
500
2.7
10
4.3
800
4.2
16
6.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
=28V I
D
=18A
V
in
=10V R
gen
=10Ω
60 A/µs
Q
i
Total Input Charge V
DD
=12V I
D
=18A V
in
= 10 V 100 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(∗)ForwardOnVoltage I
SD
=18A V
in
=0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 18 A di/dt = 100 A/µs
V
DD
=30V T
j
=25
o
C
(see test circuit, figure 5)
250
1
8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
=10V V
DS
=13V
V
in
=5V V
DS
=13V
25
25
35
35
45
45
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
=10V
V
in
=5V
35
70
60
140
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
=10V V
DS
=13V
V
in
=5V V
DS
=13V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
=25
o
CV
DD
=20V
V
in
=10V R
gen
=1KΩ L=10mH
2.5 J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP35N07FI-VNB35N07-VNV35N07
3/13
P1-P3P4-P6P7-P9P10-P12P13-P13

VNV35N0713TR

Mfr. #:
Buy VNV35N0713TR
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution OMNIFET POWER MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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