Product Standards
Transistors with Built-in Resistor
DRA9143T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1
4.7
k
+150 °C
Junction temperature Tj 150 °C
4.7 +30%
k
Input resistance R1
-30%
-0.4 V
-1.0 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
460 -
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA -0.25 V
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 160
-0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = -6 V, IC = 0 -0.01 mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50
-50 V
Parameter
Tstg -55 to
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0
Total power dissipation PT 125 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Unit: mm
SC-89
Collector
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
DRA9143T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9143T
DRA5143T in SSMini3 type package
Features
Marking Symbol:
LA
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
C
B
R
1
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
