DocID7476 Rev 8 5/17
TN805, TN815, TS820, TYN608 Characteristics
17
Figure 9. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS820
Figure 10. Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values) for TS820
0 200 400 600 800 1000 1200 1400 1600 1800 2000
0.01
0.10
1.00
10.00
R(k)
GK
Ω
dV/dt[R ] / dV/dt[ =220 ]
GK
ΩR
GK
T
j
= 125°C
V = 0.67 x V
D DRM
0 20 40 60 80 100 120 140 160 180 200 220
0.0
2.5
5.0
7.5
10.0
12.5
15.0
C (nF)
GK
dV/dt[C ] / dV/dt[ =220 ]
GK
ΩR
GK
T
V = 0.67 x V
= 125°C
R = 220
D DRM
GK
j
Ω
Figure 11. Surge peak on-state current versus
number of cycles
Figure 12. Non-repetitive surge peak on-state
current and corresponding values of I
2
t
1
10 100 1000
0
10
20
30
40
50
60
70
80
90
100
I (A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =110°C
C
TN8 / TS8
TYN08
t =10ms
p
One cycle
0.01 0.10 1.00 10.00
10
100
1000
I (A), I t (A s)
TSM
22
t (ms)
p
I t
2
I
TSM
T initial = 25°C
j
TN8 / TS8
TN8 / TS8
TYN08
TYN08
dI/dt limitation
Sinusoidal pulse width tp < 10 ms
Figure 13. On-state characteristics (maximum
values)
Figure 14. Thermal resistance junction to
ambient versus copper surface under tab
(DPAK)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.1
1.0
10.0
50.0
I (A)
TM
V (V)
TM
T
j
=max
T=25°C
j
V =0.85V
R =46m
T max.:
j
t0
d
Ω
0 2 4 6 8 10 12 14 16 18 20
0
20
40
60
80
100
S(cm²)
R (°C/W)
th(j-a)
Epoxy printed circuit board FR4
copper thickness = 35 µm
