TS820-700T Datasheet TN815-800B-TR, TS820-600B-TR, TN805-600B-TR | P1-P3

This is information on a product in full production.

May 2014 DocID7476 Rev 8 1/17

TN805, TN815, TS820, TYN608

Sensitive and standard 8 A SCRs

Datasheet - production data

Features

• On-state rms current, I

T(RMS)

8 A

• Repetitive peak off-state voltage, V

DRM

/V

RRM

600 and 800 V

• Triggering gate current, I

GT

0.2 to 15 mA

Description

Available either in sensitive (TS8) or standard

(TN8 / TYN) gate triggering levels, the 8 A SCR

series is suitable to fit all modes of control found

in applications such as overvoltage crowbar

protection, motor control circuits in power tools

and kitchen aids, inrush current limiting circuits,

capacitive discharge ignition and voltage

regulation circuits.

Available in through-hole or surface-mount

packages, they provide an optimized performance

in a limited space.

AK

G

DPAK

TO-220FPAB

IPAK

TO-220AB

A

G

K

Table 1. Device summary

Order code

Voltage (x00)

V

DRM

/V

RRM

Sensitivity

I

GT

Package

600 V 800 V

TS820-600B X 0.2 mA DPAK

TS820-600H X 0.2 mA IPAK

TS820-600T X 0.2 mA

TO-

220AB

TS820-600FP X 0.2 mA

TO-

220FPA

B

TN805-600B X 5 mA DPAK

TN815-x00B X X 15 mA DPAK

TYN608RG X 15 mA

TO-

220AB

www.st.com

Characteristics TN805, TN815, TS820, TYN608

2/17 DocID7476 Rev 8

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter

Value

Unit

TN805

TN815

TS820

TYN608

I

T(RMS)

On-state rms current (180° conduction angle)

T

c

= 110 °C

8A

T0-220FPAB, T

c

= 91 °C

I

T(AV)

Average on-state current (180° conduction angle)

T

c

= 110 °C

5A

T0-220FPAB, T

c

= 91 °C

I

TSM

Non repetitive surge peak

on-state current

t

p

= 8.3 ms

T

j

= 25 °C

73 100

A

t

p

= 10 ms 70 95

I

2

tI

2

t value for fusing t

p

= 10 ms T

j

= 25 °C 24.5 45 A

2

S

dI/dt

Critical rate of rise of on-state

current I

G

= 2 x I

GT

, t

r

≤ 100 ns

F = 60 Hz T

j

= 125 °C 50 A/µs

I

GM

Peak gate current t

p

= 20 µs T

j

= 125 °C 4 A

P

G(AV)

Average gate power dissipation T

j

= 125 °C 1 W

T

stg

T

j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

V

RGM

Maximum peak reverse gate voltage (for TN8x5 and TYN608 only) 5 V

Table 3. Sensitive electrical characteristics (T

j

= 25 °C, unless otherwise specified)

Symbol Test conditions TS820 Unit

I

GT

V

D

= 12 V, R

L

= 140 Ω

MAX. 200 µA

V

GT

MAX. 0.8 V

V

GD

V

D

= V

DRM,

R

L

= 3.3 kΩ, R

GK

= 220 Ω T

j

= 125 °C MIN. 0.1 V

V

RG

I

RG

= 10 µA MIN. 8 V

I

H

I

T

= 50 mA, R

GK

= 1 kΩ MAX. 5 mA

I

L

I

G

= 1 mA ,, R

GK

= 1 kΩ MAX. 6 mA

dV/dt V

D

= 65% V

DRM

, R

GK

= 220 Ω T

j

= 125 °C MIN. 5 V/µs

V

TM

I

TM

= 16 A, t

p

= 380 µs T

j

= 25 °C MAX. 1.6 V

V

t0

Threshold voltage T

j

= 125 °C MAX. 0.85 V

R

d

Dynamic resistance T

j

= 125 °C MAX. 46 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

, R

GK

= 220 Ω

T

j

= 25 °C

MAX.

5µA

T

j

= 125 °C 1 mA

DocID7476 Rev 8 3/17

TN805, TN815, TS820, TYN608 Characteristics

17

Table 4. Standard electrical characteristics (T

j

= 25 °C, unless otherwise specified)

Symbol Test conditions TN805 TN815 TYN608 Unit

I

GT

V

D

= 12 V, R

L

= 33 Ω

MIN. 0.5 2 2

mA

MAX. 5 15 15

V

GT

MAX. 1.3 V

V

GD

V

D

= V

DRM,

R

L

= 3.3 kΩ T

j

= 125 °C MIN. 0.2 V

I

H

I

T

= 100 mA , gate open MAX. 25 40 30 mA

I

L

I

G

= 1.2 I

GT

MAX. 30 50 70 mA

dV/dt V

D

= 67% V

DRM,

gate open T

j

=125 °C MIN. 50 150 150 V/µs

V

TM

I

TM

= 16 A t

p

= 380 µs T

j

= 25 °C MAX. 1.6 V

V

t0

Threshold voltage T

j

= 125 °C MAX. 0.85 V

R

d

Dynamic resistance T

j

= 125 °C MAX. 46 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

T

j

= 25 °C

MAX.

5µA

T

j

= 125 °C 2 mA

Table 5. Thermal resistance

Symbol Parameter Value Unit

R

th(j-c)

Junction to case (DC)

DPAK, IPAK, TO-220AB 1.3

°C/W

TO-220FPAB 4.6

R

th(j-a)

Junction to ambient (DC)

S

(1)

= 0.5 cm

2

DPAK 70

°C/WIPAK 100

TO-220AB, TO-220FPAB 60

1. S = Copper surface under tab

Figure 1. Maximum average power dissipation

versus average on-state current

Figure 2. Average and DC on-state current

versus case temperature

0

12

3

4

56

0

1

2

3

4

5

6

7

8

P(W)

I(A)

T(AV)

α = 180°

360°

α

I(A)

T(AV)

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125

DPAK IPAK

TO-220AB

TO-220FPAB

D.C.

α = 180°

T (°C)

case

TS820-700T

TS820-700T

Products related to this Datasheet