VS-MBR2035CT-N3

VS-MBR20...CTHN3 Series
www.vishay.com
Vishay Semiconductors
Revision: 05-Mar-14
1
Document Number: 94960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
AEC-Q101 qualified meets JESD 201 class 2 whisker test
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
2 x 10 A
V
R
35 V, 45 V
V
F
at I
F
0.57 V
I
RM
max. 15 mA at 125 °C
T
J
max. 150 °C
E
AS
8 mJ
Package TO-220AB
Diode variation Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 20 A
V
RRM
35/45 V
I
FRM
T
C
= 135 °C (per leg) 20
A
I
FSM
t
p
= 5 μs sine 1060
V
F
10 A
pk
, T
J
= 125 °C 0.57 V
T
J
Range -65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR2035CTHN3 VS-MBR2045CTHN3 UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 135 °C, rated V
R
10
A
per device 20
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C 20
Non-repetitive peak surge current I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated V
RRM
applied
1060
Surge applied at rated load condition half wave,
single phase, 60 Hz
150
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH 8 mJ
VS-MBR20...CTHN3 Series
www.vishay.com
Vishay Semiconductors
Revision: 05-Mar-14
2
Document Number: 94960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A T
J
= 25 °C 0.84
V10 A
T
J
= 125 °C
0.57
20 A 0.72
Maximum instantaneous reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.1
mA
T
J
= 125 °C 15
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.354 V
Forward slope resistance r
t
17.6 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 600 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to 150
°C
Maximum storage temperature range T
Stg
-65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(only for TO-220)
0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf·in)
maximum 12 (10)
Marking device Case style TO-220AB
MBR2035CTH
MBR2045CTH
VS-MBR20...CTHN3 Series
www.vishay.com
Vishay Semiconductors
Revision: 05-Mar-14
3
Document Number: 94960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
0.8 1.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40.2 0.6 1.0
1.61.2 1.8
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.0001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
4540302010
0.01
0.001
5152535
T
J
= 150 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 75 °C
1000
040
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20
100
5030
10
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
100
0.01
10

VS-MBR2035CT-N3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-MBR2035CT-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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