BTA2008W-600D,135

BTA2008W-600D
3Q Hi-Com Triac
15 June 2016 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic
package. This "series D" triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 111 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 9 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 9.9 A
T
j
junction temperature - - 125 °C
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
0.25 - 5 mA
WeEn Semiconductors
BTA2008W-600D
3Q Hi-Com Triac
BTA2008W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 2 / 15
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
0.25 - 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
0.25 - 5 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - - 10 mA
V
T
on-state voltage I
T
= 0.85 A; T
j
= 25 °C; Fig. 12 - 1.35 1.6 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 10 V/µs;
gate open circuit
0.5 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 mb mounting base; connected to
main terminal 2
1 32
4
SC-73 (SOT223)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA2008W-600D SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
WeEn Semiconductors
BTA2008W-600D
3Q Hi-Com Triac
BTA2008W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 3 / 15
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 111 °C; Fig. 1; Fig. 2;
Fig. 3
- 0.8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 9 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 9.9 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.41 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
003aag395
2
4
6
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
sp
= 111 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
T
sp
(°C)
-50 1501000 50
003aag396
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
111°C
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values

BTA2008W-600D,135

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs 3 QUADRANT TRIACS
Lifecycle:
New from this manufacturer.
Delivery:
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