1/10September 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
STD5N20L
N-CHANNEL 200V - 0.65 - 5A DPAK
STripFET™ MOSFET
Table 1: General Features
TYPICAL R
DS
(on) = 0.65 @ 5V
CONDUCTION LOSSES REDUCED
LOW INPUT CAPACIATNCE
LOW THRESHOLD DEVICE
DESCRIPTION
The STD5N20L utilizes the latest advanced de-
sign rules of ST’s proprietary STripFET™ technol-
ogy. This is suitable for the most demanding DC
Motor Control and lighting application.
APPLICATIONS
UPS AND MOTOR CONTROL
LIGHTING
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE V
DSS
R
DS(on)
I
D
Pw
STD5N20L 200 V < 0.7 5 A 33 W
1
3
DPAK
SALES TYPE MARKING PACKAGE PACKAGING
STD5N20LT4 D5N20L DPAK TAPE & REEL
Rev. 3
STD5N20L
2/10
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k)
200 V
V
GS
Gate- source Voltage ±20 V
I
D
Drain Current (continuous) at T
C
= 25°C
5A
I
D
Drain Current (continuous) at T
C
= 100°C
3.6 A
I
DM
( )
Drain Current (pulsed) 20 A
P
TOT
Total Dissipation at T
C
= 25°C
33 W
Derating Factor 0.27 W/°C
T
stg
Storage Temperature
55 to 150 °C
T
j
Operating Junction Temperature
Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 275 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 200 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
A
V
DS
= Max Rating, T
C
= 125°C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50µA
12.5V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
= 2.5 A 0.65 0.7
3/10
STD5N20L
Table 6: Dynamic
Table 7: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Starting T
j
=25 °C, I
d
= 5 A, V
DD
= 50 V
(*) Pulse width limited by safe operating area
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(2) Forward Transconductance V
DS
= 15 V, I
D =
5 A 6.5 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0 242
44
6
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 100 V, I
D
= 2.5 A
R
G
= 4.7Ω, V
GS
= 5V
(Resistive Load see Figure 14)
11.5
21.5
14
15.5
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160 V, I
D
= 5 A,
V
GS
= 5V
5
1.5
3
6nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 5 A
I
SDM
(*)
Source-drain Current (pulsed) 20 A
V
SD
(1)
Forward On Voltage
I
SD
= 5 A, V
GS
= 0
1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100 A/µs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, see Figure 15)
93
237
5.1
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100 A/µs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, see Figure 15)
97
286
5.9
ns
nC
A

STD5N20LT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 200 Volt 5 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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