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4
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= ± 10 V, I
S
= - 10 mA
sequence each switch on
Room
Full
45
60
87
60
74
r
DS(on)
Matching Between Channels
g
R
DS(on)
V
D
= ± 10 V Room 5 %
Source Off Leakage Current I
S(off)
V
EN
= 0 V
V
D
= ± 10 V
V
S
= ± 10 V
Room
Full
- 0.5
- 50
0.5
50
- 0.5
- 5
0.5
5
nA
Drain Off Leakage Current I
D(off)
DG406B
Room
Full
- 1
- 200
1
200
- 1
- 40
1
40
DG407B
Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
Drain On Leakage Current I
D(on)
V
S
= V
D
= ± 10
sequence each
switch on
DG406B
Room
Full
- 1
- 200
1
200
- 1
- 40
1
40
DG407B
Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
Digital Control
Logic High Input Voltage V
INH
Full 2.4 2.4
V
Logic Low Input Voltage V
INL
Full 0.8 0.8
Logic High Input Current I
AH
V
A
= 2.4 V, 15 V Full - 1 1 - 1 1
µA
Logic Low Input Current I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V Full - 1 1 - 1 1
Logic Input Capacitance C
in
f = 1 MHz Room 6 pF
Dynamic Characteristics
Transition Time t
TRANS
see figure 2
Room
Full
115 148
170
148
161
ns
Break-Before-Make Interval t
OPEN
see figure 4
Room
Full
39 10
29
10
21
Enable Turn-On Time t
ON(EN)
see figure 3
Room
Full
75 107
134
107
123
Enable Turn-Off Time t
OFF(EN)
Room
Full
50 88
98
88
94
Charge Injection Q C
L
= 1 nF, V
S
= 0 V, R
S
= 0 Room 11 pC
Off Isolation
h
OIRR
V
EN
= 0 V, R
L
= 50
f = 1 MHz
Room - 86 dB
Source Off Capacitance C
S(off)
V
EN
= 0 V, V
S
= 0 V, f = 1 MHz Room 6
pF
Drain Off Capacitance C
D(off) V
EN
= 0 V
V
D
= 0 V
f = 1 MHz
Room 108
DG407B Room 54
Drain On Capacitance C
D(on)
DG406B Room 114
DG407B Room 57
Power Supplies
Positive Supply Current I+
V
EN
= V
A
= 0 or 5 V
Room
Full
23 30
75
30
75
µA
Negative Supply Current I-
Room
Full
- 0.02 - 1
- 10
- 1
- 10
Positive Supply Current I+
V
EN
= 2.4 V, V
A
= 0 V
Room
Full
28 500
900
500
700
Negative Supply Current I-
Room
Full
- 0.01 - 20
- 20
- 20
- 20
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
www.vishay.com
5
Vishay Siliconix
DG406B, DG407B
Notes:
a. Guaranteed by ± 15 V leakage test, not production tested.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. r
DS(on)
= R
DS(on)
MAX. - R
DS(on)
MIN.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 0 12 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= 3 V, I
S
= - 1 mA
sequence each switch on
Room 78 100 100
r
DS(on)
Matching Between
Channels
g
R
DS(on)
Room 5 %
Source Off Leakage Current
a
I
S(off) V
EN
= 0 V
V
D
= 10 V or 0.5 V
V
S
= 0.5 V or 10 V
Room - 0.5 0.5 - 0.5 0.5
nA
Drain Off Leakage Current
a
I
D(off)
DG406B Room - 1 1 - 1 1
DG407B Room - 1 1 - 1 1
Drain On Leakage Current
a
I
D(on)
V
S
= V
D
= ± 10 V
sequence each
switch on
DG406B Room - 1 1 - 1 1
DG407B Room - 1 1 - 1 1
Dynamic Characteristics
Switching Time of Multiplexer t
TRANS
V
S1
= 8 V, V
S8
= 0 V,
V
IN
= 2.4 V
Room 130 163 163
ns
Enable Turn-On Time t
ON(EN)
V
INH
= 2.4 V, V
INL
= 0 V
V
S1
= 5 V
Room 93 125 125
Enable Turn-Off Time t
OFF(EN)
Room 63 94 94
Charge Injection Q C
L
= 1 nF, V
S
= 6 V, R
S
= 0 Room 9 pC
Power Supplies
Positive Supply Current I+
V
EN
= 0 V or 5 V,
V
A
= 0 V or 5 V
Room
Full
13 30
75
30
75
µA
Negative Supply Current I-
Room
Full
- 0.01 - 20
- 20
- 20
- 20
www.vishay.com
6
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. V
D
and Dual Supply Voltage
On-Resistance vs. V
D
and Temperature
Leakage vs. Analog Voltage
5
25
45
65
85
105
125
- 20 - 15 - 10 - 5 0 5 1 0 1 5 2 0
R
DS ( on)
- Drain-Source On-Resistance (Ω)
V
D
- Drain Voltage (V)
T
A
= 25 °C
± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
5
15
25
35
45
55
65
75
85
- 1 5 - 10 - 5 0 5 10 15
- 55 °C
V ± = ± 15 V
25 °C
R
DS(on)
- Drain-Source On-Resistance (Ω)
V
D
- Drain Voltage (V)
125 °C
85 °C
- 200
- 150
- 100
- 5 0
0
50
100
150
200
- 1 5 - 10 - 5 0 5 10 15
V
D
or V
S
- Drain or Source V oltage (V)
I
D( of f)
V - = - 15 V
T
A
= 25 °C
I
D
, I
S
(pA)
I
D( on)
I
S( o f f )
On-Resistance vs. V
D
and Unipolar Supply Voltage
On-Resistance vs. V
D
and Temperature
Leakage vs. Current
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20 22
V+ = 5.0 V
T
A
= 25 °C
R
DS(on)
- Drain-Source On-Resistance (Ω)
V
D
- Drain V oltage (V)
V+ = 12 V
V+ = 15 V
V+ = 20 V
V+ = 10 V
V+ = 22 V
- 80 - 60 - 40 - 20 0 20 40 60 80 100 120 140
1
1000
10000
Temperature (°C)
10
100
Leakage (pA)
I
D(off)
I
D(on)
I
S(off)
V ± = ± 15 V

DG407BDN-T1

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Multiplexer Switch ICs RECOMMENDED ALT 781-DG407BDN-T1-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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