CTS520
1
Schottky Barrier Diode Silicon Epitaxial
CTS520
CTS520
CTS520
CTS520
Start of commercial production
2012-02
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) Low reverse current: I
R(2)
= 5 µA (max)
(2) Small chip scale package: Thickness = 0.40 mm (max)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
1: Cathode
2: Anode
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Reverse voltage
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Operating temperature
Symbol
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
T
opr
Note
(Note 1)
(Note 2)
Rating
30
300
200
1
150
125
-55 to 125
-40 to 100
Unit
V
mA
A
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse.
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
2014-02-24
Rev.3.0