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BC372

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
BC372/D
BC372, BC373
High Voltage
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BC372
BC373
V
CEO
100
80
Vdc
Collector−Base Voltage
BC372
BC373
V
CES
100
80
Vdc
Emitter−Base Voltage V
EBO
12 Vdc
Collector Current − Continuous I
C
1.0 Adc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BC372 TO−92 5000 Units / Bulk
BC37x = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 1
1
2
3
BC373 TO−92 5000 Units / Bulk
BC372G TO−92
(Pb−Free)
5000 Units / Bulk
BC373G TO−92
(Pb−Free)
5000 Units / Bulk
(Note: Microdot may be in either location)
http://onsemi.com
BC
37x
AYWW G
G
BC373RL1 TO−92 2000 / Tape & Ree
l
BC373ZL1 TO−92 2000 / Ammo Pack
BC373RL1G TO−92
(Pb−Free)
2000 / Tape & Ree
l
BC373ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
COLLECTOR 3
BASE
2
EMITTER 1
BC372, BC373
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(1)
(I
C
= 100 mAdc, I
B
= 0) BC372
BC373
V
(BR)CES
100
80
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) BC372
BC373
V
(BR)CBO
100
80
−
−
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
12 − − Vdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0) BC372
(V
CB
= 60 Vdc, I
E
= 0) BC373
I
CBO
−
−
−
−
100
100
nAdc
Emitter Cutoff Current
(V
EB
= 10 V, I
C
= 0)
I
EBO
− − 100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 250 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
8.0
10
−
−
−
160
K
Collector−Emitter Saturation Voltage
(I
C
= 250 mAdc, I
B
= 0.25 mAdc)
V
CE(sat)
− 1.0 1.1 Vdc
Base−Emitter Saturation Voltage
(I
C
= 250 mAdc, I
B
= 0.25 mAdc)
V
BE(sat)
− 1.4 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 200 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
− 10 25 pF
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
g
= 100 kW, f = 1.0 kHz)
NF − 2.0 − dB
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
BC372, BC373
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100 K
1 K
1
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “Saturation” and “On” Voltages
VOLTAGE (V)
1.6
1.2
1
0
5 10010 50010 100 1000
10 K
T
A
= 125°C
25°C
−55°C
V
CE
= 5 V
1.4
0.8
0.6
V
BE(sat)
@ I
C
/I
B
= 100
0.2
V
BE(on)
@ V
CE
= 5 V
V
CE(sat)
@ I
C
/I
B
= 100
0.4
Figure 3. Current−Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
1000
100
10
V
CE
= 5 V
T
J
= 25°C
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
T
0.6 101 600100
C, CAPACITANCE (pF)
Figure 4. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
100.1
100
C
ib
100
1
10
C
ob
P1-P3P4-P4

BC372

Mfr. #:
Buy BC372
Manufacturer:
Diodes Incorporated
Description:
Darlington Transistors
Lifecycle:
New from this manufacturer.
Delivery:
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