MBRF790HC0G

MBRF735 - MBRF7150
CREAT BY ART
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
1.02
0.92
-
-
dV/dt V/μs
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: J1512
-
- 55 to +150
I
R
0.57 0.65 0.82
5
--
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBRF
735
MBRF
745
MBRF
750
MBRF
760
MBRF
790
MBRF
7100
Voltage rate of change (Rated V
R
)
10000
Storage temperature range
15 10
0.75 0.92
0.1
Note 1: tp = 2.0 μs, 1.0KHz
- 55 to +175
Typical thermal resistance 7
Operating junction temperature range
mA
-
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
150 A
Peak repetitive reverse surge current (Note 1)
V
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5A, T
J
=25°C
I
F
=7.5A, T
J
=125°C
I
F
=15A, T
J
=25°C
I
F
=15A, T
J
=125°C
V
F
1.0 0.5
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
I
FRM
0.84
0.72 -
15 A
Polarity: As marked
Maximum DC blocking voltage
Maximum average forward rectified current 7.5
Maximum repetitive peak reverse voltage
Maximum RMS voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
Taiwan Semiconductor
7A, 35V - 150V Isolated Schottk
y
Barrier Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AC
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
UNIT
MBRF
7150
MECHANICAL DATA
Case: ITO-220AC
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
1
2
CREAT BY ART
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Version: J1512
RATINGS AND CHARACTERISTICS CURVES
Note 1: "xx" defines voltage from 35V (MBRF735) to 150V (MBRF7150)
EXAMPLE
EXAMPLE P/N
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
MBRF7xx
(Note 1)
H C0 G ITO-220AC 50 / Tube
MBRF735 - MBRF7150
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
HC0 G
AEC-Q101 qualified
Green compound
MBRF760MBRF760HC0G
0
2
4
6
8
10
0 50 100 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1 FORWARD CURRENT DERATING CURVE
MBRF735-MBRF745
MBRF750-MBRF7150
Resistive or
inductive load
with heat sink
0
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
MBRF735-MBRF745
MBRF750-MBRF7150
T
J
=25
°
C
T
J
=125
°
C
T
J
=75
°
C
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Pulse width=300μs
1% duty cycle
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7100
MBRF7150
T
J
=25
°
C
T
J
=125
°
C
CREAT BY ART
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.10 0.098 0.122
C 2.30 2.90 0.091 0.114
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.00 1.60 0.000 0.063
I 0.95 1.45 0.037 0.057
J 0.50 0.90 0.020 0.035
K 2.40 3.20 0.094 0.126
L 14.80 15.50 0.583 0.610
M - 4.10 - 0.161
N - 1.80 - 0.071
O 12.60 13.80 0.496 0.543
P 4.95 5.20 0.195 0.205
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Version: J1512
MARKING DIAGRAM
MBRF735 - MBRF7150
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
ITO-220AC
10
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE (°C/W)
T-PULSE DURATION (sITO-220AC )
FIG. 6 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS

MBRF790HC0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE SCHOTTKY 90V 7.5A ITO220AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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