CMOS, Low Voltage, 4 Ω Dual SPST
Switches in 3 mm × 2 mm LFCSP
Data Sheet
ADG721/ADG722/ADG723
Rev. E
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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FEATURES
1.8 V to 5.5 V single supply
4 Ω (max) on resistance
Low on resistance flatness
−3 dB bandwidth >200 MHz
Tiny package options
8-lead MSOP
3 mm × 2 mm LFCSP (A grade)
Fast switching times
t
ON
, 20 ns
t
OFF
, 10 ns
Low power consumption (<0.1 μW)
TTL/CMOS compatible
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
FUNCTIONAL BLOCK DIAGRAMS
ADG721
IN1
D2
S2
S1
D1
IN2
00045-001
ADG722
IN1
D2
S2
S1
D1
IN2
00045-002
Figure 1. Figure 2.
ADG723
SWITCHES SHOWN FOR
A LOGIC "0" INPUT
IN1
D2
S2
S1
D1
IN2
00045-003
Figure 3.
GENERAL DESCRIPTION
The ADG721, ADG722, and ADG723 are monolithic CMOS
SPST switches. These switches are designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, and low leakage
currents. The devices are packaged in both a tiny 3 mm × 2 mm
LFCSP and an MSOP, making them ideal for space-constrained
applications.
The ADG721, ADG722, and ADG723 are designed to operate
from a single 1.8 V to 5.5 V supply, making them ideal for use
in battery-powered instruments and with the new generation of
DACs and ADCs from Analog Devices, Inc.
The ADG721, ADG722, and ADG723 contain two independent
single-pole/single-throw (SPST) switches. The ADG721 and
ADG722 differ only in that both switches are normally open
and normally closed, respectively. In the ADG723, Switch 1 is
normally open and Switch 2 is normally closed.
Each switch of the ADG721, ADG722, and ADG723 conducts
equally well in both directions when on. The ADG723 exhibits
break-before-make switching action.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V single-supply operation.
2. Ver y low R
ON
(4 Ω max at 5 V, 10 Ω max at 3 V).
3. Low on resistance flatness.
4. −3 dB bandwidth >200 MHz.
5. Low power dissipation. CMOS construction ensures low
power dissipation.
6. 8-lead MSOP and 3 mm × 2 mm LFCSP.
ADG721/ADG722/ADG723 Data Sheet
Rev. E | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Pin Descriptions ....................................... 6
Terminology .......................................................................................7
Typical Performance Characteristics ..............................................8
Test Circuits ..................................................................................... 10
Applications ..................................................................................... 12
ADG721/ADG722/ADG723 Supply Voltages ....................... 12
On Response vs. Frequency ...................................................... 12
Off Isolation ................................................................................ 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
REVISION HISTORY
10/11—Rev. D to Rev. E
Changes to Ordering Guide ...............................................................
4/11—Rev. C to Rev. D
Changes to Ordering Guide .......................................................... 14
1/11—Rev. B to Rev. C
Changes to Table 4 ............................................................................ 6
Changes to Ordering Guide .......................................................... 14
2/07—Rev. A to Rev. B
Updated Format .................................................................. Universal
Changes to Specifications ................................................................ 3
Changes to Absolute Maximum Ratings ....................................... 5
Change to Figure 4 ........................................................................... 6
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 13
3/04—Rev. 0 to Rev. A
Additions to Applications ................................................................ 1
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ....................................................... 10
Data Sheet ADG721/ADG722/ADG723
Rev. E | Page 3 of 16
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
A, B Grade
1
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
4 5 Ω max See Figure 12
On Resistance Match Between Channels, ∆R
ON
0.3 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.0 Ω max
On Resistance Flatness, R
FL AT(ON)
0.85 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.5 Ω max
LEAKAGE CURRENTS A Grade V
DD
= 5.5 V
Source off Leakage, I
S
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 13
Drain off Leakage, I
D
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 13
Channel on Leakage, I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 4.5 V, see Figure 14
LEAKAGE CURRENTS B Grade V
DD
= 5.5 V
Source off Leakage, I
S
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
±0.25 ±0.35 nA max Test Circuit 2
Drain off Leakage, I
D
(OFF) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
±0.25 ±0.35 nA max See Figure 13
Channel on Leakage, I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 4.5 V
±0.25 ±0.35 nA max See Figure 14
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005
μA typ
V
IN
= V
INL
or V
INH
±0.1
μA max
DYNAMIC CHARACTERISTICS
2
t
ON
14 ns typ R
L
= 300 Ω, C
L
= 35 pF
20 ns max V
S
= 3 V, see Figure 15
t
OFF
6 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns max V
S
= 3 V, see Figure 15
Break-Before-Make Time Delay, t
D
(ADG723 Only) 7 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 3 V, see Figure 16
Charge Injection
2
pC typ
V
S
= 2 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 17
Off Isolation −60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
Channel-to-Channel Crosstalk −77 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−97 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 19
Bandwidth −3 dB
200
MHz typ
R
L
= 50 Ω, C
L
= 5 pF, see Figure 20
C
S
(OFF)
7
pF typ
C
D
(OFF) 7 pF typ
C
D
, C
S
(ON) 18 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 μA typ Digital inputs = 0 V or 5 V
1.0 μA max
1
Temperature range: A, B grades, −40°C to +85°C. All specifications apply to both grades unless otherwise stated.
2
Guaranteed by design; not subject to production test.

ADG723ACPZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 4 Ohm 1.8V CMOS Dual SPST
Lifecycle:
New from this manufacturer.
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