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MSA-3186-TR1G

P1-P3P4-P6P7-P7
MSA-3111, MSA-3186
Silicon Bipolar RFIC Ampliers
Data Sheet
MSA-3111
MSA-3186
Features
MSA-3111
• Surface Mount SOT-143 Package
• 3 dB Bandwidth: DC to 0.5 GHz
• 18.4 dB Gain at 1 GHz
• 3.5 dB NF at 1 GHz
•
Lead-free Option Available
MSA-3186
• Surface Mount Plastic Microstrip Package
• 3 dB Bandwidth: DC to 0.5 GHz
• 18.7 dB Gain at 1 GHz
• 3.5 dB NF at 1 GHz
•
Lead-free Option Available
Description
The MSA-31XX series are high performance silicon bi-
polar RFIC ampliers designed to be cascadable in 50 Ω
systems. The stability factor of K > 1 contributes to easy
cascading in numerous narrow and broadband IF and RF
commercial and industrial applications.
The MODAMP MSA series is fabricated using a 10 GHz f
T
,
25 GHz F
MAX
, silicon bipolar RFIC process which utilizes
nitride self-alignment, ion implantation, and gold metalli-
zation to achieve excellent uniformity, performance, and
reliability. The use of an external bias resistor for tem-
perature and current stability also allows bias exibility.
Package options include the industry standard plastic
surface mount SOT-143 package and the 85 mil surface
mountable plastic microstripline package.
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
A31x
2
Absolute Maximum Ratings
[1]
Parameter MSA-3111 MSA-3186
Device Current 50 mA 60 mA
Power Dissipation
[2,3]
250 mW
[3a]
325 mW
[3c]
RF Input Power +13 dBm +13 dBm
Junction Temperature 150°C 150°C
Storage Temperature -65 to 150°C -65 to 150°C
Thermal
Resistance: θ
jc
500°C/W 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3a. Derate at 2.0 mW/°C for T
C
> 25°C.
b. Derate at 6.5 mW/°C for T
C
> 149°C.
c. Derate at 8.7 mW/°C for T
C
> 112°C.
Typical Biasing Conguration
Electrical Specications, T
A
= 25°C
I
D
= 29 mA, Z
o
= 50 Ω
MSA-3111 MSA -3186
Parameters and
Symbol Test Conditions Units Min. Typ. Max. Min. Typ. Max.
G
P
Power Gain
(|S
21
|
2
)
f = 0.1 GHz dB 23.5 24.4 23.5 24.6
f = 0.5 GHz 22.4 22.3
f = 1.0 GHz 18.4 18.7
∆G
P
Gain Flatness
f = 0.1 to 0.3 GHz dB ±0.5 ±0.5
f
3dB
3 dB Bandwidth GHz 0.5 0.5
VSWR Input VSWR
f = 0.1 to 3.0 GHz 1.2:1 1.2:1
Output VSWR
f = 0.1 to 3.0 GHz 1.2:1 1.4:1
P
1dB
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz dBm 9.0 9.0
NF 50 Ω Noise
Figure
f = 1.0 GHz dB 3.5 3.5
IP
3
Third Order
Intercept
Point
f = 1.0 GHz dBm 23 21
t
d
Group Delay
f = 1.0 GHz psec 130 130
V
D
Device Voltage
T
C
= 25°C V 4.0 4.5 6.0 4.0 4.7 6.0
dV/dT Device Voltage
Temperature Coecient mV/°C -9.6 -9.6
OUTPUT
R
bias
V 7 V
CC
V = 4.5 V
d
INPUT
4
1
2
3
R =
bias
I
d
DC BLOCK
RF CHOKE
CC d
V Ð V
MSA
3
Gp (dB)
FREQUENCY (GHz)
0.1 1.0 4.0
30
25
5
10
15
20
-25
°
C
85
°
C
25
°
C
-55
°
C
I (mA)
D
Gp (dB)
4025 30
16
12
24
20
30
26
14
18
22
28
20 35
1.0 GHz
0.5 GHz
10
0.1 GH
z
2.0 GHz
P (dBm)
1dB
FREQUENCY (GHz)
0.1
0
1.0 4.0
14
2
8
10
25 mA
6
4
12
40 mA
35 mA
30 mA
20 mA
NOISE FIGURE (dB)
FREQUENCY (GHz)
0.1
3
1.0 4.0
4
5
40 mA
20 mA
P (dBm)
1dB
AMBIENT TEMPERATURE (
°
C)
GAIN (dB)
8525
9
19
18
8
10
17
-25
NF
6
4
5
3
NOISE FIGURE (dB)
P
G
1dB
P
16
-55
°
C
0
0
30
10
20
V (VOLTS)
D
40
1 6 5432
-25
°
C
25
°
C
85
°
C
I mA
D
Typical Performance for MSA-3111
Figure 1. Power Gain vs. Frequency at Four Tempera-
tures, I
D
= 29 mA.
Figure 2. Power Gain vs. Current at 25°C. Figure 3. Typical P
1dB
vs. Frequency at 25°C.
Figure 6. I
D
vs. V
D
at Four Temperatures.
Figure 5. Power Gain, Noise Figure, and P
1dB
vs. Tem-
perature at 1 GHz and I
D
= 29 mA.
Figure 4. Noise Figure vs. Frequency at I
D
= 29 mA.
P1-P3P4-P6P7-P7

MSA-3186-TR1G

Mfr. #:
Buy MSA-3186-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amplifier Si RFIC
Lifecycle:
New from this manufacturer.
Delivery:
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