Jun. 2010
2
V
CE = VCES, G-E short
±V
GE = VGES, C-E short
T
j = 25°C
T
j = 125°C
V
CC = 600V, IC = 600A, VGE = 15V
V
CC = 600V, IC = 600A
V
GE = ±15V
R
G = 1.0Ω, Inductive load
I
E = 600A
I
E = 600A, G-E short
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips
I
C = 60mA, VCE = 10V
I
C = 600A, VGE = 15V
V
CE = 10V
G-E short
1200
±20
600
1200
600
1200
2080
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
1200
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
N • m
g
1
0.5
2.65
—
140
12
2.7
—
800
180
900
350
300
—
3.35
0.06
0.11
—
0.023
*3
10
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
—
—
1.95
2.15
—
—
—
4000
—
—
—
—
—
28
—
—
—
0.019
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
7V
V
68
ns
Collector-emitter cut-off current
Gate-emitter leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
R
th(j-c)R
R
th(c-f)
Rth(j-c’)Q
R
G
Symbol
Parameter
V
GE(th)
VCEsat
*
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, R
th(f-a) should be measured just under the chips.
Note 1. I
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j) does not exceed Tjmax rating.
3. Junction temperature (T
j) should not increase beyond 150°C.
Collector-emitter voltage
Gate-emitter voltage
Total power dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
DC, T
C’ = 109°C
*3
Pulse (Note 2)
Pulse (Note 2)
T
C = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute, RMS
Main terminals M8 screw
Mounting to heat sink M6 screw
G(E) Terminal M4 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Conditions UnitRating
V
CES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Visol
—
—
—
Unit
Typ.
Limits
Min. Max.
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Conditions
