BGA416
Electrical Characteristics
Data Sheet 5 Rev. 2.1, 2008-04-21
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
2 Electrical Characteristics
Electrical characteristics at T
A
= 25 °C (measured in test circuit specified in Figure 2)
V
CC
= 3 V, unless otherwise specified
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Voltage at pin RFout
V
OUT
6V
Device current
1)
1) Device current is equal to current into pin RFout
I
D
20 mA
Current into pin RFin
I
in
0.5 mA
Input power
P
in
8dBm
Total power dissipation,
T
S
< 123°C
2)
2) T
S
is measured on the ground lead at the soldering point
P
tot
100 mW
Junction temperature
T
J
150 °C
Ambient temperature range
T
A
-65... 150 °C
Storage temperature range
T
STG
-65... 150 °C
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
1) For calculation of R
thJA
please refer to Application Note Thermal Resistance
R
thJS
270 K/W
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Maximum available power gain
G
MA
23 dB f =0.9GHz
14 dB
f =1.8GHz
Insertion power gain
|S
21
|
2
17 dB f =0.9GHz
11 dB
f =1.8GHz
Reverse isolation
|S
12
|60 dBf =0.9GHz
40 dB
f =1.8GHz
Noise figure (
Z
S
= 50 Ω) F
50Ω
1.2 dB f =0.9GHz
1.6 dB
f =1.8GHz
Output power at 1 dB gain
compression (
Z
S
= Z
L
=50Ω)
P
-1dB
-3 dBm f =0.9GHz
-3 dBm
f =1.8GHz
Output third order intercept point
(
Z
S
= Z
L
=50Ω)
OIP
3
14 dBm f =0.9GHz
14 dBm
f =1.8GHz
Device current
I
D
5.5 mA
