©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSB811
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -1.0 A
P
C
Collector Power Dissipation 350 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
= 0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100µA, I
C
= 0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -0.1 µA
h
FE
DC Current Gain V
CE
= -1V, I
C
= -100mA 70 400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1A, I
B
= -0.1A -0.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1A, I
B
= -0.1A -1.2 V
f
T
Current Gain Bandwidth Product V
CE
= -6V, I
C
= -10mA 110 MHz
C
ob
Output Capacitance V
CB
= -6V, I
E
=0, f=1MHz 18 pF
Classification O Y G
h
FE
70 ~ 140 120 ~ 240 200 ~ 400
KSB811
Audio Frequency Power Amplifier
• Complement to KSD1021
• Collector Current : I
C
= -1A
• Collector Power Dissipation : P
C
=350mW
1.Emitter 2. Collector 3. Base
TO-92S
1
