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PMEG4010BEA,135

P1-P3P4-P6P7-P9P10-P12
2004 Jun 14 3
NXP Semiconductors Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMEGXX10BEA − plastic surface mounted package; 2 leads SOD323
PMEGXX10BEV plastic surface mounted package; 6 leads SOT666
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV − 20 V
PMEG3010BEA/PMEG3010BEV − 30 V
PMEG4010BEA/PMEG4010BEV − 40 V
I
F
continuous forward current T
s
≤ 55 °C; note 1 − 1 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A
I
FSM
non-repetitive peak forward current t
p
= 8 ms; square wave;
note
2
− 10 A
T
j
junction temperature note 3 − 150 °C
T
amb
operating ambient temperature note 3 −65 +150 °C
T
stg
storage temperature −65 +150 °C
2004 Jun 14 4
NXP Semiconductors Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
PMEGXX10BEA (SOD323)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
R
th(j-s)
thermal resistance from junction to
soldering point
note 4 90 K/W
PMEGXX10BEV (SOT666)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 2 and 5 405 K/W
in free air; notes 2 and 6 215 K/W
R
th(j-s)
thermal resistance from junction to
soldering point
note 4 80 K/W
SYMBOL PARAMETER CONDITIONS
PMEG2010BEA/
PMEG2010BEV
PMEG3010BEA/
PMEG3010BEV
PMEG4010BEA/
PMEG4010BEV
UNIT
TYP. MAX. TYP. MAX. TYP. MAX.
V
F
forward voltage I
F
= 0.1 mA 90 130 90 130 95 130 mV
I
F
= 1 mA 150 190 150 200 155 210 mV
I
F
= 10 mA 210 240 215 250 220 270 mV
I
F
= 100 mA 280 330 285 340 295 350 mV
I
F
= 500 mA 355 390 380 430 420 470 mV
I
F
= 1 000 mA 420 500 450 560 540 640 mV
I
R
continuous
reverse current
V
R
= 10 V; note 1 15 40 12 30 7 20 μA
V
R
= 20 V; note 1 40 200 − − − − μA
V
R
= 30 V; note 1 − − 40 150 − − μA
V
R
= 40 V; note 1 − − − − 30 100 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz 66 80 55 70 43 50 pF
2004 Jun 14 5
NXP Semiconductors Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
handbook, halfpage
0.6
V
F
(V)
0.4
I
F
(mA)
0.20
10
4
10
3
10
2
10
1
10
−1
MHC673
(1) (2) (3)
Fig.3 Forward current as a function of forward
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) T
amb
= 150 °C.
(2) T
amb
= 85 °C.
(3) T
amb
= 25 °C.
handbook, halfpage
20105015
MHC674
10
5
10
4
10
3
10
2
10
1
V
R (V)
I
R
(μA)
(1)
(3)
(2)
Fig.4 Reverse current as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) T
amb
= 150 °C.
(2) T
amb
= 85 °C.
(3) T
amb
= 25 °C.
handbook, halfpage
0 5 10 20
V
R
(V)
120
140
100
0
40
20
80
60
15
C
d
(pF)
MHC675
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
T
amb
= 25 °C; f = 1 MHz.
handbook, halfpage
0.6
V
F
(V)
0.4
I
F
(mA)
0.20
10
4
10
3
10
2
10
1
10
−1
MHC676
(1) (2) (3)
Fig.6 Forward current as a function of forward
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
(1) T
amb
= 150 °C.
(2) T
amb
= 85 °C.
(3) T
amb
= 25 °C.
P1-P3P4-P6P7-P9P10-P12

PMEG4010BEA,135

Mfr. #:
Buy PMEG4010BEA,135
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 1A Very Low VF MEGA Barrier Rectifier
Lifecycle:
New from this manufacturer.
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