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NIF5003NT3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 5
1 Publication Order Number:
NIF5003N/D
NIF5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Short Circuit Protection/Current Limit
• Thermal Shutdown with Automatic Restart
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 Vdc
Gate−to−Source Voltage V
GS
"14 Vdc
Drain Current Continuous I
D
Internally Limited
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
1.25
1.9
W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
12
100
65
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 7.0 Apk, L = 9.5 mH, R
G
= 25 W)
E
AS
233 mJ
Operating and Storage Temperature Range
(Note 3)
T
J
, T
stg
−55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
53 mW @ 10 V
14 A
http://onsemi.com
SOT−223
CASE 318E
STYLE 3
1
MARKING DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
5003N = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
2
3
4
1
AYW
5003N G
G
2
3
4
GATE
DRAIN
SOURCE
DRAIN
NIF5003N
http://onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
(V
GS
= 0 Vdc, I
D
= 250 mAdc, T
J
= −40°C to 150°C)
V
(BR)DSS
42
40
46
45
51
51
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
0.6
2.5
5.0
−
mAdc
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− 50 125
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
5.0
2.2
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C)
R
DS(on)
−
−
53
95
68
123
mW
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C)
R
DS(on)
−
−
63
105
76
135
mW
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
V
SD
− 0.95 1.1 V
SWITCHING CHARACTERISTICS
Turn−on Time
(V
in
to 90% I
D
)
R
L
= 4.7 W, V
in
= 0 to 10 V, V
DD
= 12 V
T
(on)
− 16 20
ms
Turn−off Time
(V
in
to 10% I
D
)
R
L
= 4.7 W, V
in
= 10 to 0 V, V
DD
= 12 V
T
(off)
− 80 100
ms
Slew Rate On
R
L
= 4.7 W,
V
in
= 0 to 10 V, V
DD
= 12 V
−dV
DS
/dt
on
− 1.4 −
V/ms
Slew Rate Off
R
L
= 4.7 W,
V
in
= 10 to 0 V, V
DD
= 12 V
dV
DS
/dt
off
− 0.5 −
V/ms
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Current Limit
(V
GS
= 5.0 Vdc)
V
DS
= 10 V (V
GS
= 5.0 Vdc, T
J
= 150°C)
I
LIM
12
7.0
18
13
24
18
Adc
Current Limit (V
GS
= 10 Vdc)
V
DS
= 10 V (V
GS
= 10 Vdc, T
J
= 150°C)
I
LIM
18
13
22
18
30
25
Adc
Temperature Limit (Turn−off) V
GS
= 5.0 Vdc T
LIM(off)
150 175 200 °C
Thermal Hysteresis V
GS
= 5.0 Vdc
DT
LIM(on)
− 15 − °C
Temperature Limit (Turn−off) V
GS
= 10 Vdc T
LIM(off)
150 165 185 °C
Thermal Hysteresis V
GS
= 10 Vdc
DT
LIM(on)
− 15 − °C
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM) ESD 4000 − − V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
NIF5003N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
100°C
Figure 1. On−Region Characteristics
12
4
4
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.3
46
0.5
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
0.05
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 10−30 30
1.4
1.0
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
1.0
35
T
J
= −55°C
I
D
= 3 A
T
J
= 25°C
0.045
0.03
70
I
D
= 3 A
V
GS
= 5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.8
210
10
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
0.06
10000
100000
100
V
DS
≥ 10 V
0.055
020
20
3
798
2345
4530
0.1
0.2
0.4
0.7
0.9
0.6
0.8
0.035
0.04
110 130
1000
8
12
1.5
2.5
3.5
678910
0.6
0.8
1.2
1.6
90−10 4010 25 35155
16
2
18
6
10
14
0.07
0.065
0.075
T
J
= 25°C
V
GS
= 10 V
V
GS
= 5 V
0
35
20
31
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
15
5
0
25
10
30
25
40.5 3.51.5 2.5 4.5
V
GS
= 10 V
V
GS
= 9 V
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
T
J
= 25°C
Current Limit
Inception Region
P1-P3P4-P5

NIF5003NT3

Mfr. #:
Buy NIF5003NT3
Manufacturer:
ON Semiconductor
Description:
MOSFET 42V 14A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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