ELECTRO-OPTICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
ISC Short Circuit Current*** H = 100 fc, 2850 K 150 200 mmA
I D Dark Current H = 0, VR = 10 mV 10 50 pA
RSH Shunt Resistance H = 0, VR = 10 mV .20 2 GΩ
TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV -8 % /
o
C
CJ Junction Capacitance H = 0, VR = 10 V** 1700 pF
CWL Center Wavelength (CWL, lo) +/- 2 nm 600 nm
HBW Half Bandwidth (FWHM) 65 nm
VBR Breakdown Voltage I = 10 mmA 50 75 V
N EP Noise Equivalent Power VR = 10 mV @ Peak 9x10
-15
W/ Hz
tr Response Time RL = 1 KΩ VR = 10 V 1.0 µµS
ABSOLUTE MAXIMUM RATING (TA=25
O
C unless otherwise noted)
SYMBOL PARAMETER MIN MAX UNITS
VBR Reverse Voltage 100 V
T
STG
Storage Temperature -20 +85
O
C
TO Operating Temperature Range -15 +70
O
C
TS Soldering Temperature* +240
O
C
I
L
Light Current 0.5 mA
*1/16 inch from case for 3 secs max
FEATURES
600 nm CWL
65 nm FWHM
Low noise
Silicon Photodiode, Filter Combination Photovoltaic
600 nm (red color) Type PDV-V403
APPLICATIONS
Red color matching
Color meters
Film processing
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.**f = 1 MHz, ***without filter
[FORM NO. 100-PDV-V403 REV A]
DESCRIPTION: The PDV-V403 is a silicon,
PIN planardiffused, photodiode with a red
color 600 nm
+
/- 2 nm CWL wide band
interferance filter and a 65 nm half band-
width. Ideal for photometry and radiometry
measurement applications.
ACTIVE AREA = 17.74 mm
2
PACKAGE DIMENSIONS INCH [mm]
PHOTONIC
DETECTORS INC.
SPECTRAL RESPONSE
RESPONSIVITY (A/W)
0.200 [5.08] DIA
PIN CIRCLE
CATHODE
(CASE GROUND)
ANODE
0.020 [0.51] DIA
2 PLACES
0.415 [10.54]
0.425 [10.80]
0.030 [0.76]
0.035 [0.89]
0.500 [12.70]
0.080 [2.03]
+
-
0.005 [0.13]
ACTIVE AREA SURFACE
0.320 [8.13]
0.330 [8.38]
DIA
0.335 [8.51]
0.345 [8.76]
0.355 [9.02]
0.365 [9.27]
DIA
0.235 [5.97]
0.245 [6.22]
DIA
45°
FILTER CAP
WIRE
BONDS
CHIP
HEADER
EPOXY MARKING INK (WAVE LENGTH NO.)
0.135 [3.43]
0.235 [5.97]
0.223 [5.66]
ACTIVE AREA
0.123 [3.12]
ACTIVE AREA
SUBASSEMBLY
EPOXY COVERING
EYELET
TO-5 CAN PACKAGE
WAVELENGTH (nm)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
190
300
400
500
600
700
800
900
1000
1100
1200
FWHM = 65 nm
@ 75% Tx MIN
QE = 100%
