1
Subject to change without notice.
www.cree.com/power
D
a
t
as
h
e
e
t
:
C
SD
2
0
0
6
0
D
R
e
v
.
Q
CSD20060D–Silicon Carbide Schottky Diode
Zero recovery
®
RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCP
out
:2000W-4000W
• MotorDrives
-TypicalPower:5HP-10HP
Package
TO-247-3
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F(AVG)
AverageForwardCurrent(PerLeg/Device)
10/20
16.5/33
A
T
C
=150˚C
T
C
=125˚C
I
F(Peak)
PeakForwardCurrent 25/50 A T
C
=125˚,T
REP
<1mS,Duty=0.5
I
FRM
RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
43/86
29/58
A
T
C
=25˚C,t
P
=10ms,HalfSineWave
T
C
=125˚C,t
P
=10ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg)
77 A T
C
=25˚C,t
P
=1.5ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
250/500 A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation(PerLeg)
138
46
W
T
C
=25˚C
T
C
=125˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-247MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
CSD20060D TO-247-3 CSD20060
V
RRM
= 600 V
I
F(AVG)
=20A
Q
c
=56nC