APTDF30H1201G

APTDF30H1201G
APTDF30H1201G – Rev 1 October, 2012
www.microsemi.com
1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
T
C
= 25°C 43
I
F(AV)
Maximum Average Forward
Current
Duty cycle = 50%
T
C
= 80°C 30
I
FSM
Non-Repetitive Forward Surge Current 8.3ms
T
J
= 45°C
210
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
5
3
6
CR2
CR1
1
2
4
CR4
CR3
10879
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
V
RRM
= 1200V
I
C
= 30A @ Tc = 80°C
Application
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Fast Diode Full Bridge
Power Module
APTDF30H1201G
APTDF30H1201G – Rev 1 October, 2012
www.microsemi.com
2-5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
F
= 30A 2.6 3.1
I
F
= 60A 3.2
V
F
Diode Forward Voltage
I
F
= 30A T
j
= 125°C 1.8
V
T
j
= 25°C 100
I
RM
Maximum Reverse Leakage Current V
R
= 1200V
T
j
= 125°C 500
µA
C
T
Junction Capacitance V
R
= 200V 36 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 300
t
rr
Reverse Recovery Time
T
j
= 125°C 380
ns
T
j
= 25°C 360
Q
rr
Reverse Recovery Charge
T
j
= 125°C 1700
nC
T
j
= 25°C 4
I
RRM
Reverse Recovery Current
I
F
= 30A
V
R
= 800V
di/dt = 200A/µs
T
j
= 125°C 8
A
t
rr
Reverse Recovery Time 160 ns
Q
rr
Reverse Recovery Charge 2550
nC
I
RRM
Reverse Recovery Current
I
F
= 30A
V
R
= 800V
di/dt=1000A/µs
T
j
= 125°C
28
A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal Resistance 1.2 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 175
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80
g
APTDF30H1201G
APTDF30H1201G – Rev 1 October, 2012
www.microsemi.com
3-5
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
10
20
30
40
50
25 50 75 100 125 150 175
Case Temperature (ºC)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C

APTDF30H1201G

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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