Vishay Siliconix
SUD50N02-04P
Document Number: 72216
S12-2053-Rev. C, 27-Aug-12
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.8 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 °C
50
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0035 0.0043
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.0061
V
GS
= 4.5 V, I
D
= 20 A
0.0048 0.006
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
15 S
Dynamic
a
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
5000
pFOutput Capacitance
C
oss
1650
Reverse Transfer Capacitance
C
rss
770
Gate Resistance
R
g
f = 1 MHz 1.6
Total Gate Charge
c
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
40 60
nC
Gate-Source Charge
c
Q
gs
14
Gate-Drain Charge
c
Q
gd
13
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 10 V, R
L
= 0.2
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
20 30
ns
Rise Time
c
t
r
20 30
Turn-Off Delay Time
c
t
d(off)
50 75
Fall Time
c
t
f
15 25
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
Pulsed Current
I
SM
100 A
Diode Forward Voltage
b
V
SD
I
F
= 50 A, V
GS
= 0 V
0.9 1.5 V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, dI/dt = 100 A/µs
45 70 ns
Output Characteristics
0
40
80
120
160
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 thru 5 V
3 V
4 V
I
D
- Drain Current (A)
Transfer Characteristics
0
50
100
150
200
0123456
V
GS
- Gate-to-Source Voltage (V)
25 °C
T
C
= 125 °C
I
D
- Drain Current (A)
- 55 °C
