MIXA225PF1200TSF
preliminary
0123
0
50
100
150
200
250
300
350
400
450
0 100 200 300 400 500
0
10
20
30
40
50
0
25
50
75
100
125
01234
0
50
100
150
200
250
300
350
400
450
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11 V
56789101112
0
100
200
300
400
0 200 400 600 800
0
5
10
15
20
T
VJ
=25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=125°C
13 V
E
[mJ]
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. transfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
E
[mJ]
I
C
[A]
V
GE
=15V
T
VJ
= 125°C
I
C
= 225 A
V
CE
= 600 V
E
on
t
d(on)
t
r
R
G
=3.3
V
CE
=600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
rec(off)
t
[ns]
46810
10
20
30
50
100
150
E
rec(on)
E
on
Fig. 8 Typ. switching energy
versus gate resistance
R
G
[ ]
I
C
= 225 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
0 100 200 300 400 500
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
700
Fig. 6 Typ. switching energy
versus collector current
E
[mJ]
I
C
[A]
E
off
t
d(off)
t
f
R
G
= 3.3
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
=125°C
t
[ns]
t
r
t
d
(on)
t
[ns]
E
off
[mJ]
46810
10
20
30
200
400
600
E
off
Fig. 9 Typ. switching energy
versus gate resistance
R
G
[ ]
I
C
= 225 A
V
CE
=600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
f
t
d
(off)
t
[ns]
Fig. 7 Typical transient thermal
impedance junction to case
t[s]
Z
thJC
[K/W]
0.001 0.01 0.1 1 10
0.00
0.02
0.04
0.06
0.08
0.10
0.12
IGBT
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20121102bData according to IEC 60747and per semiconductor unless otherwise specified
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