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EMD4DXV6T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1 Publication Order Number:
EMD4DXV6/D
EMD4DXV6
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD4DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
350 °C/W
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
250 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 board with minimum mounting pad.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)(2)(3)
(4) (5) (6)
http://onsemi.com
SOT−563
CASE 463A
STYLE 1
U7 = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
EMD4DXV6T5G SOT−563
(Pb−Free)
8000 / Tape &
Reel
EMD4DXV6T1G SOT−563
(Pb−Free)
4000 / Tape &
Reel
(Note: Microdot may be in either location)
U7 M G
G
1
1
6
NSVEMD4DXV6T5G SOT−563
(Pb−Free)
8000 / Tape &
Reel
EMD4DXV6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current (V
EB
= 6.0, I
C
= 5.0 mA) I
EBO
− − 0.2 mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA) h
FE
80 140 −
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA) V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor R1 7.0 10 13
kW
Resistor Ratio R1/R2 0.17 0.21 0.25
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current (V
EB
= 6.0, I
C
= 0 mA) I
EBO
− − 0.1 mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA) h
FE
80 140 −
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA) V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor R1 32.9 47 61.1
kW
Resistor Ratio R1/R2 0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833°C/W
EMD4DXV6
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS — EMD4DXV6 PNP TRANSISTOR
10
1
0.1
010 20 30 4050
100
10
1
0 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15202530 3540 4550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0 20406080
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 6. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 5 V
V
O
= 0.2 V
25°C
T
A
=-25°C
75°C
75°C
P1-P3P4-P5

EMD4DXV6T5G

Mfr. #:
Buy EMD4DXV6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
Lifecycle:
New from this manufacturer.
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