2SD1963T100R

2SD1963
Transistors
Rev.A 1/2
Power transistor (50V, 3A)
2SD1963
zFeatures zExternal dimensions (Unit : mm)
1) Low saturation voltage, typically
V
CE(sat) = 0.45V (Max.) at IC/IB =1.5A /0.15A.
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)
(1)
4.5
0.5
4.0
2.5
1.0
2) Excellent DC current gain characteristics.
3) Complements the 2SB1308.
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw=10ms
2 When mounted on a 40
×
40
×
0.7mm ceramic board.
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
50 V
V
V
A(DC)
°C
°C
20
6
3
I
C
A(Pulse)
5
1
2
0.5
2.0
W
W
150
55 to 150
Symbol Limits Unit
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Measured using pulse current.
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
50
20
6
180
150
0.25
35
0.5
0.5
560
0.45
VI
C
=50µA
I
C
= 1mA
I
E
= 50µA
V
CB
=40V
V
EB
=5V
V
CE
=2V, I
C
=0.5A
I
C
/I
B
=1.5A/ 0.15A
V
CE
=6V, I
E
= −50mA, f=100MHz
V
CB
=20V, I
E
=0A, f=1MHz
V
V
µA
µA
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
2SD1963
Transistors
Rev.A 2/2
zPackaging specifications and h
FE
Marking
Code
Package
MPT3
2SD1963
RS
DG
Basic ordering unit (pieces)
h
FE
T100
1000
Type
Denotes h
FE
zElectrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
0 1.41.21.00.80.60.4
0.2
1m
2m
5m
0.01
0.02
0.2
0.1
0.05
0.5
1
2
10
5
V
CE
=
2V
25
°C
25°C
Ta
=
100
°C
Fig.2 DC current gain vs.
collector current
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=
2V
1 m 5 m 0.01 0.05 1 2 5 1 02m
100
200
500
1000
2000
5000
50
20
10
5
0.02 0.1 0.50.2
25
°C
25°C
Ta=100
°C
Fig.3
Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta
= −
25
°
C
Ta
=
100
°C
Ta
=
25
°C
l
C
/l
B
=40
12 510
0.01 0.02 0.1 0.2 0.50.052m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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2SD1963T100R

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 20V 3A
Lifecycle:
New from this manufacturer.
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