APTC60AM24T1G Datasheet APTC60AM24T1G | P1-P3

APTC60AM24T1G

APTC60AM24T1G – Rev1 October, 2012

www.microsemi.com

1

–

7

1

8

7

Q1

Q2

56

3

4

11

NTC

12

9

10

2

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 600 V

T

c

= 25°C 95

I

D

Continuous Drain Current

T

c

= 80°C 70

I

DM

Pulsed Drain current 260

A

V

GS

Gate - Source Voltage ±20 V

R

DSon

Drain - Source ON Resistance 24

m

P

D

Maximum Power Dissipation T

c

= 25°C 462 W

I

AR

Avalanche current (repetitive and non repetitive) 15 A

E

AR

Repetitive Avalanche Energy 3

E

AS

Single Pulse Avalanche Energy 1900

mJ

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features



- Ultra low R

DSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

 Very low stray inductance

- Symmetrical design

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Phase leg

Super Junction MOSFET

Power Module

V

DSS

= 600V

R

DSon

= 24m max @ Tj = 25°C

I

D

= 95A @ Tc = 25°C

APTC60AM24T1G

APTC60AM24T1G – Rev1 October, 2012

www.microsemi.com

2

–

7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 600V

T

j

= 25°C 350

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 600V

T

j

= 125°C 600

µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 47.5A 24

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 2.1 3 3.9 V

I

GSS

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V 200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 14.4

C

oss

Output Capacitance

V

GS

= 0V ; V

DS

= 25V

f = 1MHz

17

nF

Q

g

Total gate Charge 300

Q

gs

Gate – Source Charge 68

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 300V

I

D

= 95A

102

nC

T

d(on)

Turn-on Delay Time 21

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 100

T

f

Fall Time

Inductive Switching (125°C)

V

GS

= 10V

V

Bus

= 400V

I

D

= 95A

R

G

= 2.5

45

ns

E

on

Turn-on Switching Energy 1350

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1040

µJ

E

on

Turn-on Switching Energy 2200

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1270

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C

95

I

S

Continuous Source current

(Body diode)

Tc = 80°C

70

A

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 95A 1.2 V

dv/dt Peak Diode Recovery  4 V/ns

t

rr

Reverse Recovery Time T

j

= 25°C 600 ns

Q

rr

Reverse Recovery Charge

I

S

= - 95A

V

R

= 350V

di

S

/dt = 200A/µs

T

j

= 25°C 34 µC

 dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

 - 95A di/dt  200A/µs V

R

 V

DSS

T

j

 150°C

APTC60AM24T1G

APTC60AM24T1G – Rev1 October, 2012

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJC

Junction to Case Thermal Resistance

0.27 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline

(dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTC60AM24T1G

APTC60AM24T1G

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