RJP60D0DPK Preliminary
R07DS0166EJ0300 Rev.3.00 Page 2 of 6
Jul 13, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
— — 5 A V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4.0 — 6.0 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
— 1.6 2.2 V I
C
= 22 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
— 2.0 — V I
C
= 45 A, V
GE
= 15 V
Note3
Input capacitance Cies — 1050 — pF
Output capacitance Coes — 70 — pF
Reveres transfer capacitance Cres — 32 — pF
V
CE
= 20 V
V
GE
= 0
f = 1 MHz
Total gate charge Qg — 45 — nC
Gate to emitter charge Qge — 6 — nC
Gate to collector charge Qgc — 20 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
t
d(on)
— 35 — ns
t
r
— 20 — ns
t
d(off)
— 90 — ns
Switching time
t
f
— 70 — ns
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A
Rg = 5
Inductive load)
Short circuit withstand time t
sc
3.0 5.0 — s V
CC
360 V, V
GE
= 15 V
Notes: 3. Pulse test
