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TEMT1040

P1-P3P4-P6P7-P9
TEMT1000, TEMT1020, TEMT1030, TEMT1040
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 29-Jun-11
1
Document Number: 81554
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor, RoHS Compliant
DESCRIPTION
TEMT1000 series are silicon NPN phototransistors with high
radiant sensitivity in black, surface mount, plastic packages
with lens and daylight blocking filter. Filter bandwidth is
matched with 870 nm to 950 nm IR emitters.
FEATURES
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm IR emitters
• Fast response times
• Angle of half sensitivity: = ± 15°
• Package matches with IR emitter series TSML1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
• IR detector for daylight application
• Photo interrupters
•Counter
•Encoder
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
16757
TEMT1000
TEMT1030
TEMT1040
TEMT1020
PRODUCT SUMMARY
COMPONENT I
ca
(mA) (deg)
0.5
(nm)
TEMT1000 7 ± 15 730 to 1000
TEMT1020 7 ± 15 730 to 1000
TEMT1030 7 ± 15 730 to 1000
TEMT1040 7 ± 15 730 to 1000
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEMT1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
TEMT1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
TEMT1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke
TEMT1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
10 ms I
CM
100 mA
Power dissipation T
amb
55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t 5 s T
sd
260 °C
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R
thJA
400 K/W
TEMT1000, TEMT1020, TEMT1030, TEMT1040
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 29-Jun-11
2
Document Number: 81554
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21167
R
thJA
= 400 K/W
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Angle of half sensitivity ± 15 deg
Wavelength of peak sensitivity
p
880 nm
Range of spectral bandwidth
0.5
730 to 1000 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
, = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 t
on
2.0 μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 t
off
2.3 μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 f
c
180 kHz
Collector light current
E
e
= 1 mW/cm
2
, = 950 nm,
V
CE
= 5 V
I
ca
27.0 mA
20
100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
TEMT1000, TEMT1020, TEMT1030, TEMT1040
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 29-Jun-11
3
Document Number: 81554
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Emitter Capacitance vs.
Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.01
0.1
1
10
100
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
10
21168
V
CE
= 5 V
λ = 950 nm
0.1 101
0
2
4
6
8
10
100
f = 1 MHz
C
CEO
- Collector Emitter Capacitance (pF)
V
CE
- Collector Emitter Voltage (V)
94 8294
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
21169
0.0
0.1
0.2
0.3
0.4
0.5
600 700 800 900 1000 1100
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.6
0.7
0.8
0.9
1.0
S
rel
- Relative Sensitivity
94 8248
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.20.4
ϕ - Angular Displacement
P1-P3P4-P6P7-P9

TEMT1040

Mfr. #:
Buy TEMT1040
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors 5V 100mW 880nm
Lifecycle:
New from this manufacturer.
Delivery:
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