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BAS70-07S,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 09 — 13 January 2010 6 of 20
NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point at pins 2, 3, 5 and 6.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT143B - - 500 K/W
SOT363 (BAS70-07S) - - 416 K/W
SOT666 (BAS70VV)
[2]
- - 700 K/W
SOT666 (BAS70-07V)
[2]
- - 416 K/W
SOD123F
[2]
- - 330 K/W
SOD323 - - 450 K/W
SOD523
[2]
- - 450 K/W
SOD882
[2]
- - 500 K/W
SOT323 - - 625 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
SOT363 (BAS70XY)
[3]
- - 260 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
=1mA - - 410 mV
I
F
=10mA - - 750 mV
I
F
=15mA - - 1 V
I
R
reverse current V
R
=50V - - 100 nA
V
R
=70V - - 10 μA
C
d
diode capacitance V
R
=0V; f=1MHz - - 2 pF
BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 09 — 13 January 2010 7 of 20
NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(4) T
amb
= −40 °C
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=10kHz T
amb
=25°C; f = 1 MHz
Fig 3. Differential forward resistance as a function of
forward current; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
10
0 0.2 0.4 0.6 0.8 1
1
I
F
(mA)
V
F
(V)
mra803
(1) (4)(2) (3)
10
2
10
−1
10
−2
mra805
1
10
10
2
0 20406080
V
R
(V)
I
R
(μA)
(1)
(3)
(2)
10
−1
10
−2
10
−3
10
1
110
r
dif
(Ω)
I
F
(mA)
mra802
10
−1
10
2
10
2
10
3
0
0.5
1
1.5
2
0 20406080
mra804
C
d
(pF)
V
R
(V)
BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 09 — 13 January 2010 8 of 20
NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
8. Package outline
Fig 5. Package outline SOD323 (SC-76) Fig 6. Package outline SOD523 (SC-79)
Fig 7. Package outline SOT23 (TO-236AB) Fig 8. Package outline SOD123F
Fig 9. Package outline SOD882 Fig 10. Package outline SOT323 (SC-70)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3
1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55
1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4
2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

BAS70-07S,115

Mfr. #:
Buy BAS70-07S,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHOTTKY
Lifecycle:
New from this manufacturer.
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