SANGDEST
MICROELECTRONICS
Technical Data Green Products
Data Sheet N1022, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
123SPC080/A
123SPC100/A
Maximum Ratings:
Characteristics Symbol Condition Max. Units
80 (123SPC080/A)Peak Inverse Voltage V
RWM
-
100 (123SPC100/A)
V
Max. Average Forward I
F(AV)
50% duty cycle, rectangular
wave form
120 A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
I
FSM
8.3 ms, half Sine pulse 1650 A
Non-Repetitive Avalanche
Energy(per leg)
E
AS
T
J
=25℃,I
AS
=0.75A,
L=40 mH
11.25 mJ
Repetitive Avalanche
Current(per leg)
I
AR
I
AS
decaying linearly to 0 in 1 μ
sec Frequency limited by T
J
max. V
A
=1.5×V
R
0.75 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop* V
F1
@ 120A, Pulse, T
J
= 25 °C
0.87 V
V
F2
@ 120A, Pulse, T
J
= 125 °C
0.72 V
Max. Reverse Current (per
leg) *
I
R1
@V
R
= rated VR
T
J
= 25 °C
2.0 mA
I
R2
@V
R
= rated VR
T
J
= 125 °C
48.0 mA
Max. Junction Capacitance
(per leg)
C
J
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
3000 pF
Max. Voltage Rated of
Change
dv/dt - 10,000
V/μs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature T
J
- -55 to +175
°C
Max. Storage Temperature T
stg
- -55 to +175
°C
Maximum Thermal
Resistance Junction to Case
R
θJC
DC operation 0.20
°C/W
Case Style SPD-3/A
