74ALVC00 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 16 May 2014 4 of 14
NXP Semiconductors
74ALVC00
Quad 2-input NAND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 1.65 3.6 V
V
I
input voltage 0 3.6 V
V
O
output voltage output HIGH or LOW state 0 V
CC
V
output 3-state 0 3.6 V
power-down mode; V
CC
=0V 0 3.6 V
T
amb
ambient temperature in free air 40 +85 C
t/V input transition rise and fall rate V
CC
=1.65V to2.7V 0 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max
V
IH
HIGH-level input voltage V
CC
= 1.65 V to 1.95 V 0.65 V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.7 - - V
V
CC
= 2.7 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= 100 A; V
CC
=1.65Vto3.6V V
CC
0.2 - - V
I
O
= 6mA; V
CC
= 1.65 V 1.25 1.51 - V
I
O
= 12 mA; V
CC
= 2.3 V 1.8 2.10 - V
I
O
= 18 mA; V
CC
= 2.3 V 1.7 2.01 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 2.53 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 2.76 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 2.68 - V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
= 100 A; V
CC
= 1.65 V to 3.6 V - - 0.2 V
I
O
=6mA; V
CC
= 1.65 V - 0.11 0.3 V
I
O
=12mA; V
CC
= 2.3 V - 0.17 0.4 V
I
O
=18mA; V
CC
= 2.3 V - 0.25 0.6 V
I
O
=12mA; V
CC
= 2.7 V - 0.16 0.4 V
I
O
=18mA; V
CC
= 3.0 V - 0.23 0.4 V
I
O
=24mA; V
CC
= 3.0 V - 0.30 0.55 V
I
I
input leakage current V
CC
= 3.6 V; V
I
=3.6VorGND - 0.1 5 A
I
OFF
power-off leakage current V
CC
= 0 V; V
I
or V
O
= 0V to 3.6V - 0.1 10 A