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Document Number: 67933
S11-1656-Rev. A, 15-Aug-11
Vishay Siliconix
SUM50P10-42
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0, I
D
= - 250 µA
- 100
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 100 V, V
GS
= 0 V
- 1
µA
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 125 °C
- 50
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 150 °C
- 250
On-State Drain Current
a
I
D(on)
V
DS
- 10 V, V
GS
= - 10 V
- 40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 14 A
0.035 0.042
V
GS
= - 4.5 V, I
D
= - 13 A
0.039 0.047
Forward Transconductance
a
g
fs
V
DS
= - 20 V, I
D
= - 14 A
55 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= - 50 V, f = 1 MHz
4600
pFOutput Capacitance
C
oss
230
Reverse Transfer Capacitance
C
rss
175
Total Gate Charge
c
Q
g
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 14 A
106 160
nC
V
DS
= - 50 V, V
GS
= - 4.5 V, I
D
= - 14 A
54 81
Gate-Source Charge
c
Q
gs
14
Gate-Drain Charge
c
Q
gd
26
Gate Resistance
R
g
f = 1 MHz 0.9 4.6 9.2
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 50 V, R
L
= 5
I
D
= - 10 A, V
GEN
= - 10 V, R
g
= 1
15 25
ns
Rise Time
t
r
20 30
Turn-Off Delay Time
t
d(off)
110 165
Fall Time
t
f
100 150
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= - 50 V, R
L
= 10
I
D
= - 10 A, V
GEN
= - 4.5 V, R
g
= 1
42 65
ns
Rise Time
t
r
160 240
Turn-Off Delay Time
t
d(off)
100 150
Fall Time
t
f
100 150
Drain-Source Body Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
- 36
A
Pulsed Current
I
SM
- 40
Forward Voltage
a
V
SD
I
F
= - 10 A, V
GS
= 0
- 0.8 - 1.2 V
Reverse Recovery Time
t
rr
I
F
= - 10 A, dI/dt = 100 A/µs
60 90 ns
Peak Reverse Recovery Current
I
RM(REC)
23A
Reverse Recovery Charge
Q
rr
150 225 nC
