MBRD650CT, MBRD660CT
Bulletin PD-20755 rev. E 05/06
V
FM
Max. Forward Voltage Drop 0.7 V @ 3A
(Per Leg) * See Fig. 1 (1) 0.9 V @ 6A
0.65 V @ 3A
0.85 V @ 6A
I
RM
Max. Reverse Leakage Current 0.1 mA T
J
= 25 °C
(Per Leg) * See Fig. 2 (1) 15 mA T
J
= 125 °C
C
T
Typ. Junction Capacitance (Per Leg) 145 pF V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance (Per Leg) 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/μs (Rated V
R
)
T
J
Max. Junction Temperature Range (*) -40 to 150 °C
T
stg
Max. Storage Temperature Range -40 to 150 °C
R
thJC
Max. Thermal Resistance (Per Leg) 6 °C/W DC operation * See Fig. 4
Junction to Case (Per Device) 3
R
thJA
Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D-Pak Similar to TO-252AA
Device Marking MBRD660CT
Thermal-Mechanical Specifications
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
V
R
= rated V
R
Part number MBRD650CT MBRD660CT
V
R
Max. DC Reverse Voltage (V) 50 60
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters Value Units Conditions
Parameters Value Units Conditions
I
F(AV)
Max. Average Forward(Per Leg) 3.0 A 50% duty cycle @ T
C
= 128°C, rectangular wave form
Current * See Fig. 5 (Per Device) 6
I
FSM
Max. Peak One Cycle Non-Repetitive 490 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 75 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repet. Aval. Energy (Per Leg) 6 mJ T
J
= 25 °C, I
AS
= 1 Amp, L = 12 mH
I
AR
Repetitive Avalanche Current 0.6 A Current decaying linearly to zero in 1 μsec
(Per Leg) Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters Value Units Conditions
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
