www.irf.com 1
4/17/06
IRF6633
DirectFET Power MOSFET
Description
The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.51mH, R
G
= 25Ω, I
AS
= 13A.
Notes:
DirectFET ISOMETRIC
MP
SQ SX ST MQ MX MT MP
0 4 8 12162024
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 16V
VDS= 10V
I
D
= 13A
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max ±20V max
4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0
5
10
15
20
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 16A
PD - 96989B
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Max.
13
59
132
±20
20
16
41
13
