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R5F212H1SNSP#U0

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P60P61-P63P64-P66P67-P69P70-P70
R8C/2H Group, R8C/2J Group 5. Electrical Characteristics
Rev.1.00 Mar 28, 2008 Page 32 of 65
REJ03B0217-0100
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.3 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
−
Program/erase endurance
(2)
100
(3)
−−times
− Byte program time − 50 400 µs
− Block erase time − 0.4 9 s
− Program, erase voltage 2.7 − 5.5 V
− Read voltage 2.2 − 5.5 V
− Program, erase temperature 0 − 60 °C
−
Data hold time
(7)
Ambient temperature = 55°C20 −−year
R8C/2H Group, R8C/2J Group 5. Electrical Characteristics
Rev.1.00 Mar 28, 2008 Page 33 of 65
REJ03B0217-0100
NOTES:
1. The measurement condition is V
CC = 2.2 to 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version).
2. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA25 bit in the VCA2
register to 0.
NOTES:
1. The measurement condition is V
CC = 2.2 to 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version).
2. Time until the voltage monitor 1 interrupt request is generated after the voltage passes V
det1.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
4. This parameter shows the voltage detection level when the power supply drops.
The voltage detection level when the power supply rises is higher than the voltage detection level when the power supply
drops by approximately 0.1 V.
NOTES:
1. The measurement condition is V
CC = 2.2 to 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version).
2. Time until the voltage monitor 2 interrupt request is generated after the voltage passes V
det2.
3. Necessary time until the voltage detection circuit operates after setting to 1 again after setting the VCA27 bit in the VCA2
register to 0.
Table 5.4 Voltage Detection 0 Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
det0 Voltage detection level 2.2 2.3 2.4 V
− Voltage detection circuit self power consumption VCA25 = 1, V
CC = 5.0 V − 0.9 −µA
t
d(E-A) Waiting time until voltage detection circuit operation
starts
(2)
−−300 µs
Vccmin MCU operating voltage minimum value 2.2 −−V
Table 5.5 Voltage Detection 1 Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
det1
Voltage detection level
(4)
2.70 2.85 3.00 V
−
Voltage monitor 1 interrupt request generation time
(2)
− 40 −µs
− Voltage detection circuit self power consumption VCA26 = 1, V
CC = 5.0 V − 0.6 −µA
t
d(E-A) Waiting time until voltage detection circuit operation
starts
(3)
−−100 µs
Table 5.6 Voltage Detection 2 Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
det2
Voltage detection level
3.3 3.6 3.9 V
−
Voltage monitor 2 interrupt request generation time
(2)
− 40 −µs
− Voltage detection circuit self power consumption VCA27 = 1, V
CC = 5.0 V − 0.6 −µA
t
d(E-A) Waiting time until voltage detection circuit operation
starts
(3)
−−100 µs
R8C/2H Group, R8C/2J Group 5. Electrical Characteristics
Rev.1.00 Mar 28, 2008 Page 34 of 65
REJ03B0217-0100
NOTES:
1. The measurement condition is T
opr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
2. This condition (external power V
CC rise gradient) does not apply if VCC ≥ 1.0 V.
3. To use the power-on reset function, enable voltage monitor 0 reset by setting the LVD0ON bit in the OFS register to 0, the
VW0C0 and VW0C6 bits in the VW0C register to 1 respectively, and the VCA25 bit in the VCA2 register to 1.
4. t
w(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain t
w(por1) for 30 s or more if −20°C ≤ Topr ≤ 85°C, maintain tw(por1) for
3,000 s or more if −40°C ≤ T
opr < −20°C.
Figure 5.2 Reset Circuit Electrical Characteristics
Table 5.7 Power-on Reset Circuit, Voltage Monitor 0 Reset Electrical Characteristics
(3)
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
por1
Power-on reset valid voltage
(4)
−−0.1 V
V
por2 Power-on reset or voltage monitor 0 reset valid
voltage
0 − Vdet0 V
t
rth
External power VCC rise gradient
(2)
20 −−mV/msec
NOTES:
1. When using the voltage monitor 0 digital filter, ensure that the voltage is within the MCU operation voltage
range (2.2 V or above) during the sampling time.
2. The sampling clock can be selected. Refer to 6. Voltage Detection Circuit of Hardware Manual for details.
3. V
det0 indicates the voltage detection level of the voltage detection 0 circuit. Refer to 6. Voltage Detection
Circuit of Hardware Manual for details.
Vdet0
(3)
Vpor1
Internal
reset signal
(“L” valid)
t
w(por1)
Sampling time
(1, 2)
Vdet0
(3)
1
f
OCO-S
× 32
1
f
OCO-S
× 32
Vpor2
External
Power V
CC
trth
trth
2.2 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P60P61-P63P64-P66P67-P69P70-P70

R5F212H1SNSP#U0

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Buy R5F212H1SNSP#U0
Manufacturer:
Renesas Electronics
Description:
16-bit Microcontrollers - MCU MCU 2/5V 4K Pb-free 20-SSOP
Lifecycle:
New from this manufacturer.
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