NE681 SERIES
FREQ. NFOPT GA
ΓΓ
ΓΓ
ΓOPT
(MHz) (dB) (dB) MAG ANG Rn/50
500 1.21 12.45 0.75 47 1.15
800 1.69 7.72 0.74 72 0.97
1000 1.95 5.96 0.68 88 0.71
1500 2.52 3.12 0.63 122 0.34
NE68133
TYPICAL NOISE PARAMETERS (TA = 25°C)
VCE = 2.5 V, IC = 1.0 mA
500 .92 14.52 0.68 47 0.42
800 1.20 10.57 0.63 70 0.34
1000 1.35 9.29 0.57 87 0.30
1500 1.71 6.53 0.50 120 0.17
2000 2.00 5.53 0.44 168 0.11
VCE = 2.5 V, IC = 3 mA
500 0.86 16.37 0.54 47 0.24
800 1.00 12.41 0.51 67 0.20
1000 1.08 11.07 0.46 86 0.18
1500 1.25 8.61 0.36 128 0.12
2000 1.40 6.99 0.35 172 0.10
FREQ. NFOPT GA
ΓΓ
ΓΓ
ΓOPT
(MHz) (dB) (dB) MAG ANG Rn/50
500 1.20 14.10 0.78 47 1.28
800 1.45 8.42 0.75 72 0.84
1000 1.67 8.37 0.68 95 0.56
NE68139
TYPICAL NOISE PARAMETERS (TA = 25°C)
V
CE = 2.5 V, IC = 1 mA
500 0.90 15.71 0.63 44 0.43
800 1.10 12.30 0.56 72 0.26
1000 1.26 11.66 0.53 98 0.20
1500 1.70 8.85 0.49 145 0.12
2000 2.20 7.12 0.57 178 0.07
V
CE = 8 V, IC = 7 mA
500 1.15 20.50 0.26 42 0.17
1000 1.25 15.62 0.16 133 0.14
1500 1.4 12.49 0.20 176 0.09
2000 1.6 10.48 0.31 -165 0.14
3000 2.15 8.00 0.53 -123 0.48
4000 3.0 6.81 0.71 -101 0.90
VCE = 2.5 V, IC = 3 mA
500 0.88 18.20 0.45 44 0.25
800 1.00 14.62 0.39 73 0.19
1000 1.08 13.29 0.37 99 0.16
1500 1.30 10.54 0.35 151 0.09
2000 1.80 8.60 0.43 -177 0.07
V
CE
= 8 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
12
10
8
6
4
2
0
1 2 3 5 7 10 20 30 50
Insertion Gain, |S
21E
|
2
(dB)
Collector Current, IC (mA)
NE68100 & NE68135
INSERTION GAIN vs.
COLLECTOR CURRENT
Frequency, f (GHz)
V
CE
= 8 V
I
C
= 20 mA
NE68133
|S
21E
|
2
MAG
NE68100
|S
21E
|
2
MAG
NE68135
30
25
20
15
10
5
0
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
VCE = 2.5 V, IC = 0.3 mA
VCE = 2.5 V, IC = 0.3 mA
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE681 SERIES
Collector Current, IC (mA)
Collector Current, IC (mA)
Ambient Temperature, T
A (°C)
NE68133
NE68135
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1 2 3 5 7 10 20 30 50
V
CE
= 8 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 8 V
50
30
20
10
7
5
3
2
1
1 2 3 5 7 10 20 30 50
Collector Current, IC (mA)
Noise Figure, NF (dB)
Collector Current, IC (mA)
V
CE
= 8 V
f = 2 GHz
3.0
2.5
2.0
1.5
1.0
0.5
0
1 2 3 5 7 10 20 30 50
Total Power Dissipation, P
T
(mW)
Collector to Base Capacitance, C
OB (
pF)
Collector to Base Voltage, VCB (V)
NE68133
NE68135
400
300
200
100
0
0 50 100 150 200
DC POWER DERATING CURVES
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
NE68133
NOISE FIGURE
vs. COLLECTOR CURRENT
NE68100 & NE68135
NOISE FIGURE
vs. COLLECTOR CURRENT
Noise Figure, NF (dB)
VCE = 8 V
f = 1 GHz
3.0
2.5
2.0
1.5
1.0
0.5
0
1 2 3 5 7 10 20 30 50
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
DC Forward Current Gain, h
FE
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
VCE = 8 V, IC = 20 mA
100 0.827 -20.8 19.513 163.9 0.012 88.3 0.964 -7.0 0.03 32.1
200 0.809 -49.5 17.981 151.0 0.022 65.5 0.894 -16.8 0.13 29.1
500 0.742 -101.1 12.631 123.0 0.038 42.2 0.691 -27.4 0.28 25.2
1000 0.701 -139.2 7.498 101.5 0.047 36.7 0.536 -29.0 0.47 22.0
1500 0.689 -156.6 5.182 90.4 0.049 33.0 0.483 -28.6 0.71 20.2
2000 0.686 -167.2 3.959 82.0 0.053 35.0 0.461 -29.2 0.88 18.7
3000 0.687 179.8 2.687 69.7 0.061 45.9 0.447 -33.6 1.11 14.4
4000 0.693 172.2 2.048 59.1 0.071 48.7 0.449 -40.6 1.21 11.8
5000 0.699 166.6 1.662 49.8 0.081 53.2 0.454 -48.0 1.27 10.0
6000 0.708 162.1 1.431 41.1 0.096 57.0 0.473 -57.1 1.15 9.4
7000 0.717 157.0 1.250 31.7 0.116 56.6 0.490 -66.8 0.99 10.3
8000 0.721 151.7 1.105 23.3 0.125 56.9 0.519 -76.0 0.97 9.5
9000 0.725 145.5 0.989 14.2 0.146 55.9 0.549 -86.4 0.83 8.3
10000 0.726 137.6 0.868 5.9 0.169 54.9 0.582 -96.0 0.74 7.1
11000 0.724 131.2 0.773 -2.0 0.179 51.9 0.621 -104.8 0.71 6.4
12000 0.722 123.6 0.673 -9.7 0.192 49.0 0.663 -114.1 0.69 5.4
100 0.665 -47.0 38.130 154.1 0.011 90.0 0.885 -15.0 0.01 35.4
200 0.664 -85.3 31.089 135.9 0.017 70.3 0.753 -26.0 0.12 32.6
500 0.663 -135.8 16.975 108.9 0.025 45.4 0.504 -30.8 0.45 28.3
1000 0.663 -161.1 9.066 93.2 0.028 49.5 0.404 -27.0 0.82 25.1
1500 0.667 -171.7 6.113 84.9 0.036 49.6 0.377 -26.3 0.97 22.3
2000 0.669 -178.4 4.627 78.3 0.042 53.2 0.369 -26.6 1.10 18.5
3000 0.676 172.7 3.112 67.9 0.054 59.2 0.361 -31.6 1.25 14.6
4000 0.686 167.3 2.361 58.6 0.071 62.6 0.362 -38.5 1.21 12.5
5000 0.693 162.6 1.913 50.1 0.086 63.5 0.372 -45.8 1.19 10.8
6000 0.705 159.0 1.643 42.2 0.103 65.1 0.386 -55.5 1.08 10.3
7000 0.719 154.5 1.433 33.3 0.123 63.2 0.405 -65.0 0.94 10.7
8000 0.727 149.4 1.266 25.4 0.133 60.6 0.433 -74.2 0.91 9.8
9000 0.726 143.5 1.134 16.7 0.153 60.4 0.464 -84.5 0.84 8.7
10000 0.733 135.9 1.001 8.4 0.171 57.3 0.500 -94.4 0.76 7.7
11000 0.732 129.4 0.897 0.5 0.185 53.9 0.546 -103.2 0.71 6.9
12000 0.728 122.1 0.787 -7.1 0.197 51.8 0.587 -112.6 0.72 6.0
S-Parameters include bond wires.
BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309 µm) long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203 µm) long each wire.
EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494 µm) long each wire.
WIRE: 0.0007" (17.7 µm) dia., gold.
NE68100
VCE = 8 V, IC = 7 mA
FREQUENCY S11 S21 S12 S22 K MAG
1
(MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)
Coordinates in Ohms
Frequency in GHz
(VCE = 8 V, IC = 7 mA)
NE681 SERIES
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K ±
= S
11
S
22
- S
21
S
12
When K 1, MAG is undefined and MSG values are used.
MSG =
|S
21
|
|S
12
|
, K =
1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10 25 50 100
S
11
17 GHz
S
11
0.1 GHz
S
22
17 GHz
S
22
0.1 GHz
120˚
90˚
60˚
30˚
150˚
180˚
-150˚
-120˚
-90˚
-60˚
-30˚
20
15
10
0.50.40.30.20.1
S
12
17 GHz
S
12
0.1 GHz
S
21
17 GHz
S
21
0.1 GHz
S
21
25

NE68133-T1B-A

Mfr. #:
Manufacturer:
CEL
Description:
RF Bipolar Transistors NPN High Frequency
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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