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DF2S6M4CT,L3F

P1-P3P4-P6P7-P9
DF2S6M4CT
1
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6M4CT
DF2S6M4CT
DF2S6M4CT
DF2S6M4CT
Start of commercial production
2016-12
1.
1.
1.
1. General
General
General
General
The DF2S6M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF2S6M4CT provides low dynamic resistance and superior protective
performance.
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The
DF2S6M4CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications that require a small
footprint.
2.
2.
2.
2. Applications
Applications
Applications
Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3.
3.
3.
3. Features
Features
Features
Features
(1) Suitable for use with a 5 V signal line. (V
RWM
≤ 5.5 V)
(2) Protects devices with its high ESD performance.
(V
ESD
= ±20 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(R
DYN
= 0.3 Ω (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(V
C
= 9 V@I
PP
= 2 A (typ.))
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(1.0 mm × 0.6 mm size (Nickname: CST2))
4.
4.
4.
4. Packaging
Packaging
Packaging
Packaging
CST2
2018-01-23
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S6M4CT
2
5.
5.
5.
5. Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
6.
6.
6.
6. Quick Reference Data
Quick Reference Data
Quick Reference Data
Quick Reference Data
Characteristics
Working peak reverse voltage
Total capacitance
Dynamic resistance
Electrostatic discharge voltage
(IEC61000-4-2) (Contact)
Symbol
V
RWM
C
t
R
DYN
V
ESD
Note
(Note 1)
(Note 2)
(Note 3)
Test Condition
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.35
0.3
Max
5.5
0.5
20
Unit
V
pF
Ω
kV
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between I
PP1
= 8 A and I
PP2
= 16 A.
Note 3: Criterion: No damage to devices.
2018-01-23
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S6M4CT
3
6.1.
6.1.
6.1.
6.1. ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
Fig.
Fig.
Fig.
Fig. 6.1.1
6.1.1
6.1.1
6.1.1 +8 kV
+8 kV
+8 kV
+8 kV Fig.
Fig.
Fig.
Fig. 6.1.2
6.1.2
6.1.2
6.1.2 -8 kV
-8 kV
-8 kV
-8 kV
Fig.
Fig.
Fig.
Fig. 6.1.3
6.1.3
6.1.3
6.1.3 +15 kV
+15 kV
+15 kV
+15 kV Fig.
Fig.
Fig.
Fig. 6.1.4
6.1.4
6.1.4
6.1.4 -15 kV
-15 kV
-15 kV
-15 kV
Fig.
Fig.
Fig.
Fig. 6.1.5
6.1.5
6.1.5
6.1.5 IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2018-01-23
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
P1-P3P4-P6P7-P9

DF2S6M4CT,L3F

Mfr. #:
Buy DF2S6M4CT,L3F
Manufacturer:
Toshiba
Description:
TVS Diodes / ESD Suppressors ESD protection diode .5pF 5.6V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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