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DMG1012UW-7

P1-P3P4-P6
DMG1012UW
Document number: DS31859 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1012UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2KV
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG1012UW-7
SOT-323
3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
2009
2010
2012
2013
2014
2015
Code
W
X
Z
A
B
C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
TOP VIEW
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
TOP VIEW
G S
D
ESD PROTECTED TO 2kV
NA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y o r Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
NA1
YM
Chengdu A/T Site
Shanghai A/T Site
e3
DMG1012UW
Document number: DS31859 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1012UW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±6 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
1.0
0.64
A
Pulsed Drain Current (Note 6)
I
DM
6 A
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 3)
P
D
0.29 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 3) R
θJA
425 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 100 nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±1.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 - 1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.3 0.45
Ω
V
GS
= 4.5V, I
D
= 600mA
0.4
0.6
V
GS
= 2.5V, I
D
= 500mA
0.5 0.75
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
- 1.4 - S
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage
V
SD
- 0.7 1.2 V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
-
60.67
-
pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
9.68
-
pF
Reverse Transfer Capacitance
C
rss
-
5.37
-
pF
Total Gate Charge
Q
g
- 736.6 -
pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
- 93.6 -
pC
Gate-Drain Charge
Q
gd
- 116.6 -
pC
Turn-On Delay Time
t
D(on)
-
5.1
-
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
Turn-On Rise Time
t
r
-
7.4
- ns
Turn-Off Delay Time
t
D(off)
-
26.7
- ns
Turn-Off Fall Time
t
f
-
12.3
- ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG1012UW
Document number: DS31859 Rev. 3 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG1012UW
0
0.3
0.6
0.9
1.2
1.5
0 1 2 3 4 5
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
0.3
0.6
0.9
1.2
1.5
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.3 0.6 0.9 1.2 1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.3 0.6 0.9 1.2 1.5
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
P1-P3P4-P6

DMG1012UW-7

Mfr. #:
Buy DMG1012UW-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET N-CHANNEL SOT-323
Lifecycle:
New from this manufacturer.
Delivery:
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