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APT8DQ60KCTG

P1-P3P4-P4
053-4211 Rev E 7-2006
New Diode Data Sheet By Darel Bidwell
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
600V 8A
APT8DQ60KCT
APT8DQ60KCTG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS All Ratings Per Leg: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
µA
pF
MIN TYP MAX
2.0 2.4
2.5
1.5
25
500
16
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 8A
I
F
= 16A
I
F
= 8A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 128°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT8DQ60KCT(G)
600
8
16
110
20
-55 to 175
300
TO-220
1
2
3
(KCT)
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
1 3
2
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular TO-220 Package
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
Microsemi Website - http://www.microsemi.com
MIN TYP MAX
- 14
- 19
- 17
- 2 -
-
90
- 160
-
3 -
- 43
- 250
- 11
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 8A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
I
F
= 8A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 8A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
W
T
Torque
MIN TYP MAX
2.7
0.07
1.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
APT8DQ60KCT(G)
DYNAMIC CHARACTERISTICS
053-4211 Rev E 7-2006
New Diode Data Sheet By Darel Bidwell
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
1.93 0.773
0.00078 0.0246
Dissipated Powe
r
(Watts)
T
J
(°C) T
C
(°C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl
y
the case to junction.
Z
EXT
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
053-4211 Rev E 7-2006
APT8DQ60KCT(G)
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 400V
4A
8A
16A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
120
100
80
60
40
20
0
14
12
10
8
6
4
2
0
Duty cycle = 0.5
T
J
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
20
18
16
14
12
10
8
6
4
2
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to X000A/µs)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
30
25
20
15
10
5
0
400
350
300
250
200
150
100
50
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 125°C
V
R
= 400V
16A
8A
4A
T
J
= 125°C
V
R
= 400V
16A
4A
8A
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P4

APT8DQ60KCTG

Mfr. #:
Buy APT8DQ60KCTG
Manufacturer:
Microchip / Microsemi
Description:
DIODE ARRAY GP 600V 8A TO220
Lifecycle:
New from this manufacturer.
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