2SD2653KT146

2SD2653K
Transistors
Low frequency amplifier
2SD2653K
!
!!
!Application
Low frequency amplifier
Driver
!
!!
!Features
1) A collector current is large.
2) V
CE(sat)
180mV
At I
C
= 1A / I
B
= 50mA
!
!!
!External dimensions (Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol
: FW
0.8
0.15
0~0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.9
1.9
0.95 0.95
Each lead has same dimensions
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
2
200
150
55~+150
4
Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=1ms
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
CB=10V, IE=0A, f=1MHz
f
T
360
MHz
VCE=2V, IE=−200mA, f=100MHz
BV
CBO 15
−−
V
I
C=10µA
BV
CEO 12
−−
V
I
C=1mA
BV
EBO 6
−−
V
I
E=10µA
I
CBO
−−
100
nA VCB=15V
I
EBO
−−
100
nA VEB=6V
V
CE(sat)
90
180 mV
IC=1A, IB=50mA
h
FE 270 680
V
CE=2V, IC=200mA
Cob 20
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
!
!!
!Packaging specifications
2SD2653K
T146
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
2SD2653K
Transistors
!
!!
!Electrical characteristic curves
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
10
DC CURRENT GAIN : h
FE
1000
100
Ta=100°C
Ta=−40°C
Ta=25°C
V
CE
=2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
1
0.1
I
C
/I
B
=20/1
V
CE
=2V
Pulsed
Ta=100°C
Ta=−40°C
Ta=25°C
Fig.2 Base-emitter saturation voltage
vs. collector current
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
CE(sat)
(V)
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta=25°C
Pulsed
IC/IB=10/1
IC/IB=20/1
IC/IB=50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
BE
(V)
0.001
COLLECTOR CURRENT : I
C
(A)
0.01
10
0.1
1
V
CE
=2V
Pulsed
Ta=100°C
Ta=−40°C
Ta=25°C
Fig.4 Grounded emitter propagation
characteristics
0.001 0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta=25°C
V
CE
=2V
f=100MHz
Fig.5 Gain bandwidth product
vs. emitter current
0.01 0.1 1 10
1
10
1000
100
Ta=25°C
V
CE
=5V
f=100MHz
tstg
tdon
tf
tr
Fig.6 Switching time
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME : (ns)
1 10 1000.1
1
10
100
1000
f
=
1MHz
IC
=
0A
Ta=25˚C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : VEB
(
V)
COLLECTOR TO BASE VOLTAGE : VCB
(
V)
0.01 0.1 1 10 100
0.01
0.1
1
10
Ta=25°C
Single Pulsed
DC Operation
PW=100ms
10ms
1ms
Fig.8 Safe Operating Area
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

2SD2653KT146

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 12V 2A
Lifecycle:
New from this manufacturer.
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