RSS065N06FU6TB Datasheet RSS065N06FU6TB | P1-P3

RSS065N06

Transistors

1/4

4V Drive

Nch

MOSFET

RSS065N06

zStructure

zDimensions

(

Unit : mm

)

Silicon N-channel MOSFET

Each lead has same dimensions

SOP8

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

zApplication

Switching

zPackaging specifications

zE

q

uivalent circuit

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

(1)Source

(2)Source

(3)Source

(4)Gate

(5)Drain

(6)Drain

(7)Drain

(8)Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(8) (7) (6) (5)

(1) (2) (3) (4)

(8) (7) (6) (5)

Package

Code

Taping

Basic ordering unit (pieces)

RSS065N06

TB

2500

Type

zAbsolute maximum ratings (Ta = 25°C)

Parameter

VV

DSS

Symbol

60

VV

GSS

20

AI

D

±6.5

AI

DP

±26

AI

S

1.6

AI

SP

26

WP

D

2.0

°CTch 150

°CTstg −55 to +150

Limits Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipatino

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Source current

(Body diode)

Pulsed

∗1 Pw≤10μs, Duty cycle≤1%

∗

2 Mounted on a ceramic board.

∗

1

∗

1

∗

2

zThermal resistance

°C / W

Rth (ch-A) 62.5

Parameter Symbol Limits Unit

Channel to ambient

∗

Mounted on a ceramic board.

∗

RSS065N06

Transistors

2/4

zElectrical characteristics (Ta = 25°C)

Parameter Symbol

I

GSS

Y

fs

Min.

−−10 μAV

GS

=20V, V

DS

=0V

V

DD

30V

Typ. Max.

Unit

Conditions

Gate-source leakage

V

(BR) DSS

60 −−VI

D

=1mA, V

GS

=0V

Drain-source breakdown voltage

I

DSS

−−1 μAV

DS

=60V, V

GS

=0V

Zero gate voltage drain current

V

GS (th)

1.0 − 2.5 V V

DS

=10V, I

D

=1mAGate threshold voltage

− 24 37 I

D

=6.5A, V

GS

=10V

Static drain-source on-state

resistance

R

DS (on)

− 28 44 mΩ I

D

=6.5A, V

GS

=4.5V

Forward transfer admittance

− 31 48 I

D

=6.5A, V

GS

=4.0V

Input capacitance

4 −−SI

D

=6.5A, V

DS

=10V

Output capacitance

C

iss

− 900 − pF V

DS

=10V

Reverse transfer capacitance

C

oss

− 200

100

− pF V

GS

=0V

Turn-on delay time

C

rss

−

13

− pF f=1MHz

V

GS

=10V

R

L

=9.1Ω

R

L

=4.6Ω, R

G

=10Ω

R

G

=10Ω

Rise time

t

d (on)

−

25

− ns

Turn-off delay time

t

r

−

60

− ns

Fall time

t

d (off)

−

20

− ns

Total gate charge

t

f

−

11

− ns

Gate-source charge

Q

g

−

2

16 nC

Gate-drain charge

Q

gs

−

4

− nC V

GS

=5V

Q

gd

−−nC

I

D

=6.5A,

∗Pulsed

∗

I

D

=3.3A, V

DD

30V

zBody diode characteristics (Source-Drain) (Ta = 25°C)

Forward voltage

V

SD

−−1.2 V I

S

=1.6A, V

GS

=0V

Parameter Symbol

Min. Typ. Max.

Unit

Conditions

∗Pulsed

∗

RSS065N06

Transistors

3/4

zElectrical characteristic curves

0.0 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5

GATE-SOURCE VOLTAGE : VGS (V)

10

1

0.1

0.01

0.001

DRAIN CURRENT : ID (A)

Fig.1

Typical Transfer Characteristics

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

VDS=10V

Pulsed

VGS=10V

Pulsed

0.01 10.1 10

DRAIN CURRENT : I

D

(A)

1

10

100

1000

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.2 Static Drain-Source

On-State Resistance

vs. Drain Current(Ι)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

Fig.3 Static Drain-Source

On-State Resistance

vs. Drain Current(ΙΙ)

V

GS

=4.5V

Pulsed

0.01 10.1 10

DRAIN CURRENT : I

D

(A)

1

10

100

1000

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

Fig.4 Static Drain-Source

On-State Resistance

vs. Drain Current(ΙΙΙ )

V

GS

=4V

Pulsed

0.01 10.1 10

DRAIN CURRENT : I

D

(A)

1

10

100

1000

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

0 5 10 15

GATE-SOURCE VOLTAGE : V

GS

(V)

0

50

100

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25°C

Pulsed

I

D

=3.25A

I

D

=6.5A

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

DS

(V)

10

CAPACITANCE : C (pF)

10000

100

1000

Ta=25°C

f=1MHz

V

GS

=0V

Fig.6 Typical Capacitance

vs. Drain-Source Voltage

C

iss

C

oss

C

rss

0.01 0.1 1 10

DRAIN CURRENT : ID (A)

1

10

SWITCHING TIME : t (ns)

1000

10000

100

Ta=25°C

V

DD

=30V

V

GS

=10V

R

G

=10Ω

Pulsed

Fig.7 Switching Characteristics

t

d(off)

t

d(on)

t

r

t

f

0 5 10 15 20

TOTAL GATE CHARGE : Qg (nC)

0

5

10

GATE-SOURCE VOLTAGE : V

GS

(V)

Ta=25°C

V

DD=30V

I

D=6.5A

R

G=10Ω

Pulsed

Fig.8

Dynamic Input Characteristics

0.0 0.5 1.0 1.5

SOURCE-DRAIN VOLTAGE : V

SD

(V)

0.01

0.1

1

10

SOURCE CURRENT : I

S

(A)

Fig.9 Source Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

RSS065N06FU6TB

RSS065N06FU6TB

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