NP1800GBRLG

© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 1
1 Publication Order Number:
NP1100GA/D
DO-15 NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: IEC 61000-4-5, IEC 60950, TIA-968-A,
EN 60950, UL 1950.
ELECTRICAL PARAMETERS
Device
V
DRM
V
(BO)
V
T
I
DRM
I
(BO)
I
T
I
H
V V V
mA
mA A mA
NP1100GxRLG 90 130 4 5 800 1.0 150
NP1300GxRLG 120 160 4 5 800 1.0 150
NP1500GxRLG 140 180 4 5 800 1.0 150
NP1800GxRLG 170 220 4 5 800 1.0 150
NP2300GxRLG 190 260 4 5 800 1.0 150
NP2600GxRLG 220 300 4 5 800 1.0 150
NP3100GxRLG 275 350 4 5 800 1.0 150
NP3500GxRLG 320 400 4 5 800 1.0 150
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS(Nominal Values)
Specification
Waveform x = series ratings
Unit
Voltage
ms
Current
ms
A B
TIA-968-A 10x560 10x560 50 100
A(pk)
GR-1089-CORE 10x1000 10x1000 50 80
* Recognized Components
BIDIRECTIONAL AXIAL LEAD
THYRISTOR
110 - 350 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1 MT2
http://onsemi.com
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
AXIAL LEAD
CASE 59AA
PLASTIC
(DO-15)
A = Assembly Location
NPxxxx = Device Number
xxx = (See Table Page 3)
YY = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
A
NPxxxx
YYWWG
G
DO-15 NP Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol Min Typ Max Unit
Breakover Voltage (Both Polarities)
NP1100GxRLG
NP1300GxRLG
NP1500GxRLG
NP1800GxRLG
NP2300GxRLG
NP2600GxRLG
NP3100GxRLG
NP3500GxRLG
V
(BO)
130
160
180
220
260
300
350
400
V
Off-State Voltage (Both Polarities)
NP1100GxRLG
NP1300GxRLG
NP1500GxRLG
NP1800GxRLG
NP2300GxRLG
NP2600GxRLG
NP3100GxRLG
NP3500GxRLG
V
DRM
90
120
140
170
190
220
275
320
V
Off State Current ( V
D1
= 50 V ) Both Polarities
( V
D2
= V
DRM
) Both Polarities
I
DRM1
I
DRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 4) V
S
= 500 V; I
T
= 2.2 A I
H
150 250 - mA
On-State Voltage I
T
= 1.0 A(pk) (PW = 300 mSec, DC = 2%)
V
T
- - 4.0 V
Maximum Non-Repetitive Rate of Change of On-State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt - - 500
A/mSec
Critical Rate of Rise of Off-State Voltage
(Linear Waveform, V
D
= 0.8 V
DRM
, T
J
= 25°C)
dv/dt 5.0 - -
kV/mSec
CAPACITANCE
Characteristics Symbol
Typ
Unit
A B
(f=1.0 MHz, 1.0 V
rms
, 2 Vdc bias)
NP1100GxRLG
NP1300GxRLG
NP1500GxRLG
NP1800GxRLG
NP2300GxRLG
NP2600GxRLG
NP3100GxRLG
NP3500GxRLG
C
o
70
60
60
60
40
40
40
40
125
100
100
100
60
60
60
60
pF
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
DO-15 NP Series
http://onsemi.com
3
SURGE RATINGS
Characteristics
Symbol A B Unit
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
10 x 560 mSec
10 x 1000 mSec
I
PPS1
I
PPS2
50
50
100
80
A(pk)
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
Figure 1. Exponential Decay Pulse Waveform
TIME (ms)
0
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
+Voltage-Voltage
-I
+I
V
T
V
DRM
V
(BO)
I
T
I
(BO)
I
H
Figure 2. Voltage Current Characteristics of TSPD
Symbol Parameter
V
DRM
Peak Off State Voltage
V
(BO)
Breakover Voltage
I
(BO)
Breakover Current
I
H
Holding Current
V
T
On State Voltage
I
T
On State Current

NP1800GBRLG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
THYRISTOR 170V 80A DO204AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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