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BPV10NF

P1-P3P4-P5
BPV10NF
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 29-May-15
1
Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
radiant sensitivity in black, T-1¾ plastic package with
daylight blocking filter. Filter bandwidth is matched with
870 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Radiant sensitive area (in mm
2
): 0.78
• Leads with stand-off
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to 950 nm
emitters
• High bandwidth: > 100 MHz at V
R
= 12 V
• Fast response times
• Angle of half sensitivity: = ± 20°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
16140-1
PRODUCT SUMMARY
COMPONENT I
ra
(μA) (deg)
0.5
(nm)
BPV10NF 60 ± 20 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV10NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
BPV10NF-CS21 Reel MOQ: 5000 pcs, 1000 pcs/reel T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction / ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W
BPV10NF
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 29-May-15
2
Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.0 1.3 V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 20 V, E = 0 I
ro
15nA
Diode capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
D
11 pF
Open circuit voltage E
e
= 1 mW/cm
2
, = 870 nm V
O
450 mV
Short circuit current E
e
= 1 mW/cm
2
, = 870 nm I
K
50 μA
Reverse light current
E
e
= 1 mW/cm
2
, = 870 nm, V
R
= 5 V I
ra
55 μA
E
e
= 1 mW/cm
2
, = 950 nm, V
R
= 5 V I
ra
30 60 μA
Temperature coefficient of I
ra
E
e
= 1 mW/cm
2
, = 870 nm, V
R
= 5 V TK
Ira
-0.1 %/K
Absolute spectral sensitivity V
R
= 5 V, = 870 nm s()0.55A/W
Angle of half sensitivity ± 20 deg
Wavelength of peak sensitivity
p
940 nm
Range of spectral bandwidth
0.5
790 to 1050 nm
Quantum efficiency = 950 nm 70 %
Noise equivalent power V
R
= 20 V, = 950 nm NEP 3 x 10
-14
W/Hz
Detectivity V
R
= 20 V, = 950 nm D* 3 x 10
12
cmHz/W
Rise time V
R
= 50 V, R
L
= 50 , = 820 nm t
r
2.5 ns
Fall time V
R
= 50 V, R
L
= 50 , = 820 nm t
f
2.5 ns
20 40 60 80
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
100
94 8436
V
R
= 20 V
0 20406080
0.6
0.8
1.0
1.2
1.4
I
ra rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
100
94 8621
V
R
= 5 V
E
e
=1 mW/cm
2
λ
= 870 nm
BPV10NF
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 29-May-15
3
Document Number: 81503
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm²)
10
94 8622
V
R
= 5 V
= 870 nm
λ
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
94 8623
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
λ
= 870 nm
0
2
4
6
8
12
10
0.1 1 10
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
100
94 8439
E = 0
f = 1 MHz
94 8426
S(λ)
rel
- Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S - Relative Sensitivity
rel
94 8624
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P5

BPV10NF

Mfr. #:
Buy BPV10NF
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60V 215mW 875nm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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