AMMP-6222-TR1G

AMMP-6222
7 to 21 GHz GaAs High Linearity LNA in SMT Package
Data Sheet
Description
Avago Technologies AMMP-6222 is an easy-to-use
broadband, high gain, high linearity Low Noise Amplier
in a surface mount package. The wide band and
unconditionally stable performance makes this MMIC
ideal as a primary or sub-sequential low noise block or a
transmitter or LO driver. The MMIC has 3 gain stages and
a selectable pin to switch between low and high current,
corresponding with low and high output power and
linearity. In the high current, high output power state,
it requires a 4V, 120mA supply. In the low current, low
output power state, the supply is reduced to 4V, 95mA.
Since this MMIC covers several bands, it can reduce part
inventory and increase volume purchase options The
MMIC is fabricated using PHEMT technology. The surface
mount package eliminates the need of chip & wire
assembly for lower cost. This MMIC is fully SMT compatible
with backside grounding and I/Os.
Package Diagram
Features
Surface Mount Package, 5.0 x 5.0 x 1.25 mm
Single Positive Bias Pin
Selectable Output Power / Linearity
No Negative Gate Bias
Specications (Vdd = 4.0V, Idd = 120mA)
RF Frequencies: 7 - 21 GHz
High Output IP3: 29dBm
High Small-Signal Gain: 24dB
Typical Noise Figure: 2.3dB
Input, Output Match: -10dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Functional Block Diagram
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 60V
ESD Human Body Model (Class 0) = 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
1. This MMIC uses depletion mode pHEMT devices.
Pin Function
1
2
Vd
3
4 RFout
5
6
7
8 RFin
Top view
Package base: GND
1 3
4
5
67
8
Current Sel
100pF
2
NC
NC
NC
NC
1 2 3
7 56
4
8RF IN
RF OUT
VdNC
NC
NCNC
Current Sel
Note: MSL Rating = Level 2A
2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6222 published specications.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or more
frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. All tested parameters guaranteed with measurement accuracy +/-0.5dB for gain and +/-0.3dB for NF in the high
output power conguration.
Table 1. RF Electrical Characteristics
TA=25°C, Id=120mA, Vd=4.0V, Zo=50 Ω
Parameter
High Output Power Conguration Lower Output Power Conguration
Unit CommentMin Typical Max Min Typical Max
Drain Current, Id 120 95 mA
Small Signal Gain, Gain 19 24 23 dB Test frequency =
8, 14, 18 GHz
Noise Figure into 50 Ω, NF 2.3 3.5 2.3 dB Test frequency =
8, 14, 18 GHz
Output Power at 1dB
Gain Compression, P1dB
15.5 14 dBm
Output Power at 3dB
Gain Compression, P3dB
17.5 16 dBm
Output Third Order
Intercept Point, OIP3
29 27 dBm
Isolation, Iso -45 -45 dB
Input Return Loss, Rlin -10 -10 dB
Output Return Loss, RLout -10 -10 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description Min. Typical Max. Unit Comments
Drain Supply Current, Id 80 120 160 mA Vd = 4.5 V, Under any RF power drive and temperature
Drain Supply Voltage, Vd 3 4 5 V
3
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, qjc
Ambient operational temperature TA = 25°C
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
qjc = 31.47 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Min. Max. Unit Comments
Drain to Ground Supply Voltage, Vd 5.5 V
Drain Current, Id 170 mA
RF CW Input Power, Pin 10 dBm CW
Channel Temperature, Tch +150 °C
Storage Temperature, Tstg -65 +150 °C
Maximum Assembly Temperature, Tmax 260 °C 20 second maximum
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.

AMMP-6222-TR1G

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 7-21GHz High Lin LNA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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