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BYT08P-400

P1-P3P4-P6P7-P7
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
δ
=tp/T
tp
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Typical values
Tj=100°C
Tj=25°C
Tj=100°C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1 10 100 200
10
12
14
16
18
20
22
24
26
28
30
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10 20 50 100 200
0
50
100
150
200
250
dIF/dt(A/µs)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=100°C
Fig. 8: Recovery charges versus dI
F
/dt (per diode).
10 20 50 100 200
0
2
4
6
8
10
IRM(A)
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
Fig. 9: Recovery current versus dI
F
/dt (per diode).
0 100 200 300 400 500
0
5
10
15
20
25
30
VFP(V)
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
Fig. 10: Transient peak forward voltage versus
dI
F
/dt (per diode)
BYT08P-400 / BYT08PI-400
4/7
0 100 200 300 400 500
0.00
0.25
0.50
0.75
1.00
1.25
1.50
tfr(µs)
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
Fig. 11: Forward recovery time versus dI
F
/dt (per
diode)
0 25 50 75 100 125 150
0.25
0.50
0.75
1.00
1.25
1.50
Tj(°C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
IRM
Qrr
Fig. 12: Dynamic parameters versus junction
temperature.
Fig. 13: Turn-off switching characteristics (without series inductance).
Fig. 14: Turn-off switching characteristics (with series inductance).
BYT08P-400 / BYT08PI-400
5/7
PACKAGE MECHANICAL DATA
TO-220AC
A
C
D
E
M
L7
H2
Ø I
L5
L6
L9
L4
G
F1
F
L2
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
BYT08P-400 / BYT08PI-400
6/7
P1-P3P4-P6P7-P7

BYT08P-400

Mfr. #:
Buy BYT08P-400
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 400V 8A TO220AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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