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MPSA93

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 6
1 Publication Order Number:
MPSA92/D
MPSA92, MPSA93
High Voltage Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPSA93
MPSA92
V
CEO
−200
−300
Vdc
Collector−Base Voltage
MPSA93
MPSA92
V
CBO
−200
−300
Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
COLLECTOR
3
2
BASE
1
EMITTER
http://onsemi.com
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
MPS
A9x
AYWWG
G
TO−92
(TO−226AA)
CASE 29−11
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
MPSA92, MPSA93
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= −1.0 mAdc, I
B
= 0) MPSA92
MPSA93
V
(BR)CEO
−300
−200
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0) MPSA92
MPSA93
V
(BR)CBO
−300
−200
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current
(V
CB
= −200 Vdc, I
E
= 0) MPSA92
(V
CB
= −160 Vdc, I
E
= 0) MPSA93
I
CBO
−
−
−0.25
−0.25
mAdc
Emitter Cutoff Current
(V
EB
= −3.0 Vdc, I
C
= 0)
I
EBO
− −0.1
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc) All Types
(I
C
= −10 mAdc, V
CE
= −10 Vdc) All Types
(I
C
= −30 mAdc, V
CE
= −10 Vdc) MPSA92
MPSA93
h
FE
25
40
25
25
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc) MPSA92
MPSA93
V
CE(sat)
−
−
−0.5
−0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
BE(sat)
− −0.9 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
50 − MHz
Collector−Base Capacitance
(V
CB
= −20 Vdc, I
E
= 0, f = 1.0 MHz) MPSA92
MPSA93
C
cb
−
−
6.0
8.0
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
MPSA92, MPSA93
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
MPSA92G TO−92
(Pb−Free)
5000 Units / Box
MPSA92RL1G TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA92RLRA TO−92 2000 / Tape & Reel
MPSA92RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA92RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA92RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA92ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA93G TO−92
(Pb−Free)
5000 Units / Box
MPSA93RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
300
0.1 1.0
10
250
200
150
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
-55°C
V
CE
= 10 Vdc
100
50
100
P1-P3P4-P5

MPSA93

Mfr. #:
Buy MPSA93
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT PNP Small Signal
Lifecycle:
New from this manufacturer.
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